B掺杂辅助自蔓延高温合成AlN晶须材料研究  

AlN Synthesized by Self-propagation High Temperature Sintering with B Doping

作　　者：梁宝岩[1] 郭猛[1] 韩警贤[1] 王志炜[1] 汪乐[1] 

机构地区：[1]中原工学院,郑州450007

出　　处：《中原工学院学报》2014年第1期55-58,共4页Journal of Zhongyuan University of Technology

基　　金：河南省教育厅科学技术研究重点项目(13A430132);河南省省院科技合作项目(122106000051)

摘　　要：采用Al粉、B粉和一种CNx前驱物粉体为原料,通过自蔓延高温合成技术,制备了AlN材料.研究结果表明,B的掺杂促进原料自蔓延反应合成AlN.当原料中Al含量较高(Al∶B∶CNx=2∶1∶1)时,产物中Al为主相,AlN含量较少;当原料配比(Al∶B∶CNx=1∶1∶1)合适时,生成B固溶的AlN材料.产物中AlN相存在两种形貌,一种是片状AlN晶粒,另一种为AlN晶须.A1N materials were fabricated by self-propagation high temperature sintering （SHS） using of A1, B and one kind of CNx powders as the raw materials. The result shows that A1N is obtained by SHS from raw materials with B doping. When A1 content is higher （A1 ： B CNx=2 ： 1 1）, AI is main phase. But A1N content is low. When AI content is appropriate amounts（A1 B ： CNx = 1 ： 1 ： 1）, AIN contained B is ob- tained. A1N phase in the product has two kinds of morphology. One kind of A1N phase is plate grains. Another kind of A1N phase is whiskers.

关 键 词：ALN 自蔓延高温合成 CNx前驱体 

分 类 号：TP18[自动化与计算机技术—控制理论与控制工程]