利用电致发光技术快速测定晶硅太阳电池少子寿命  

FAST DETERMINATION OF MINORITY CARRIER LIFETIME IN CRYSTALLINE SILICON SOLAR CELLS FROM ELECTROLUMINESCENCE TECHNIQUE

作　　者：刘霄[1] 沈文忠[1] 王振 

机构地区：[1]上海交通大学太阳能研究所,上海200240 [2]上海欧普泰科技创业有限公司,上海200333

出　　处：《太阳能学报》2014年第3期487-491,共5页Acta Energiae Solaris Sinica

基　　金：国家重点基础研究发展(973)计划(2012CB934302)

摘　　要：结合理论分析,讨论太阳电池电致发光的影响因素,提出利用电致发光技术来测定晶硅太阳电池的少子寿命。在完成测试定标后,对比目前普遍使用的微波光电导衰退法,对电致发光法测定单晶和多晶硅少子寿命进行实验验证。结果表明,电致发光测试方法能快速、稳定、准确地测定晶硅太阳电池的少子寿命。By the aid of detailed theoretical analysis, the factors affecting the solar cell electroluminescence （EL） intensity were investigated. A new EL technique has been proposed to measure the minority carrier lifetime of crystalline silicon solar cells through comparing with the results from the traditional μ-PCD method. It is demonstrated that the EL technique is able to achieve fast, stable and accurate minority carrier lifetime of both mono-and multi-crystalline silicon solar cells.

关 键 词：晶硅太阳电池 电致发光 少子寿命 

分 类 号：TN307[电子电信—物理电子学]