Pulsed metal organic chemical vapor deposition of InAlN-based heterostructures and its application in electronic devices  

作　　者：Yue Hao Junshuai Xue Jincheng Zhang 

机构地区：[1]Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University

出　　处：《Chinese Science Bulletin》2014年第12期1228-1234,共7页

基　　金：supported by the National Natural Science Foundation of China(60736033 and 60676048)

摘　　要：As a promising group III-nitride semiconductor material,InAlN ternary alloy has been attracted increasing interest and widespread research efforts for optoelectronic and electronic applications in the last 5 years.Following a literature survey of current status and progress of InAlNrelated studies,this paper provides a brief review of some recent developments in InAlN-related III-nitride research in Xidian University,which focuses on innovation of the material growth approach and device structure for electronic applications.A novel pulsed metal organic chemical vapor deposition(PMOCVD)was first adopted to epitaxy of InAlN-related heterostructures,and excellent crystalline and electrical properties were obtained.Furthermore,the first domestic InAlN-based high-electron mobility transistor(HEMT)was fabricated.Relying on the PMOCVD in combination with special GaN channel growth approach,high-quality InAlN/GaN double-channel HEMTs were successfully achieved for the first time.Additionally,other potentiality regarding to AlGaN channel was demonstrated through the successful realization of nearly lattice-matched InAlN/AlGaN heterostructures suitable for high-voltage switching applications.Finally,some advanced device structures and technologies including excellent work from several research groups around the world are summarized based on recent publications,showing the promising prospect of InAlN alloy to push group III-nitride electronic device performance even further.As a promising group III-nitride semiconductor material, InAlN ternary alloy has been attracted increasing interest and widespread research efforts for optoelectronic and electronic applications in the last 5 years. Following a literature survey of current status and progress of InAlN- related studies, this paper provides a brief review of some recent developments in InAlN-related III-nitride research in Xidian University, which focuses on innovation of the material growth approach and device structure for electronic applications. A novel pulsed metal organic chemical vapor deposition （PMOCVD） was first adopted to epitaxy of InAlN-related heterostructures, and excellent crystalline and electrical properties were obtained. Furthermore, the first domestic InAlN-based high-electron mobility transistor （HEMT） was fabricated. Relying on the PMOCVD in combination with special GaN channel growth approach, high-quality InAlN/GaN double-channel HEMTs were successfully achieved for the first time. Additionally, other potentiality regarding to AlGaN channel was demonstrated through the successful realization of nearly lattice-matched InAlN/AlGaN heterostructures suitable for high-voltage switching applications. Finally, some advanced device structures and technologies including excellent work from several research groups around the world are summarized based on recent publications, showing the promising prospect of InAlN alloy to push group III-nitride electronic device performance even further.

关 键 词：化学气相沉积 电子应用 电子器件 异质结构 有机金属 脉冲 高电子迁移率晶体管 西安电子科技大学 

分 类 号：TN304.055[电子电信—物理电子学]