三元混晶异质结系统的界面声子极化激元  

INTERFACE PHONON – POLARITONS IN HETEROSTRUCTURE SYSTEMS CONSISTING OF POLAR TERNARY MIXED CRYSTALS

作　　者：闫翠玲[1] 包锦[1] 

机构地区：[1]内蒙古农业大学理学院,呼和浩特010018

出　　处：《内蒙古农业大学学报（自然科学版）》2013年第6期177-181,共5页Journal of Inner Mongolia Agricultural University(Natural Science Edition)

基　　金：内蒙古自然科学基金重大项目(2013ZD02);内蒙古农业大学科技创新团队(培育)项目(NDPYTD2010-7);内蒙古农业大学基础学科基金(JC201002)

摘　　要：运用改进的无规元素等位移模型和玻恩-黄近似,结合电磁场的麦克斯韦方程和边界条件,研究了三元混晶异质结系统GaAs/Al0.4Ga0.6As和GaN/Ga0.35In0.65N中的界面声子极化激元,获得了界面声子极化激元模的色散关系以及界面模的频率随混晶组分的变化关系.结果表明:三元混晶异质结系统中存在三支界面声子极化激元模,且这三支界面模的频率随混晶组分呈非线性变化.三元混晶的"单模"和"双模"性也在色散曲线中体现了出来.Interface phonon -polaritons in heterostructure systems consisting of polar ternary mixed crystal are investigated with the modified random - element - isodisplacement model and the Born - Huang approximation, based on the Maxwell＇ s equations with the usual boundary conditions. The numerical results of the interface phonon - polariton frequencies as functions of the wave - vector and composition x in the GaAs/Al0.4G%.6As and GaN/Ga0.35In0.65N heterostructure systems are obtained and discussed. It is shown that there are three branches of interface phonon - polariton modes in heterostrncture systems, and the interface modes non - linear change in frequency with the composition. The effects of ＂one mode＂ and ＂two mode＂ behaviors of the ternary mixed crystals are shown in the dispersion curves.

关 键 词：界面声子极化激元 异质结 三元混晶 

分 类 号：O471.3[理学—半导体物理]