生物分子膜门电极AlGaN／GaN高电子迁移率晶体管(HEMT)生物传感器研究  

Research on biomolecule-gate AlGaN/GaN high-electron-mobility transistor biosensors

作　　者：李加东 程珺洁[3] 苗斌 魏晓玮 张志强[4] 黎海文[4] 吴东岷 

机构地区：[1]中国科学院苏州纳米技术与纳米仿生研究所国际实验室,苏州215123 [2]中国科学院苏州纳米技术与纳米仿生研究所纳米器件与应用重点实验室,苏州215123 [3]中国科学院合肥物质科学研究院,合肥230031 [4]中国科学院苏州生物医学工程技术研究所医用微纳技术研究室,苏州215163

出　　处：《物理学报》2014年第7期35-40,共6页Acta Physica Sinica

基　　金：国家自然科学基金青年科学基金(批准号:61104226);国家重大科学研究计划项目(2010CB934700)资助的课题~~

摘　　要：设计并制作了结构尺寸为毫米量级的AlGaN/GaN高电子迁移率晶体管(HEMT)生物传感器,采用数值分析的方法分析了器件传感区域长度与宽度比值及待测物调控二维电子气(2DEG)距离与感测信号之间的关系,给出了结构尺寸为毫米量级的AlGaN/GaN HEMT生物传感器的设计依据,以不同浓度的前列腺特异性抗原(PSA)为待测物,对制作的AlGaN/GaN HEMT生物传感器进行了初步测量,测试结果表明,在50 mV的电压下,毫米量级的AlGaN/GaN HEMT生物传感器的对PSA的探测极限低于0.1 pg/ml.实验表明毫米量级的AlGaN/GaN HEMT生物传感器具有灵敏度高,易于集成等优点,具备良好的应用前景.In order to enhance the performance of A1GaN/GaN high electron mobility transistor （HEMT） biosensor, millimeter grade AIGaN/GaN HEMT structure have been designed and successfully fabricated. Factors influencing the capability of the A1GaN/GaN HEMT biosensor are analyzed. UV/ozone is used to oxidize GaN surface and then 3-aminopropyl trimethoxysilane （APTES） self-assembled monolayer can be bound to the sensing region. This serves as a binding layer in the attachment of prostate specific antibody （anti-PSA） for prostate specific antigen detection. The millimeter grade biomolecule-gated GaN/A1GaN HEMT sensor shows a quick buffer solution is added to the antibody-immobilized sensing response when the target prostate specific antigen in a area. The detection capability of this biomolecule-gate sensor estimated to be below 0.1 pg/ml level using a 2 ~ 1.5 mm2 sensing area, which is the best result of GaN/A1GaN HEMT biosensor for PSA detection till now. The electrical result of the biomolecule-gated GaN/A1GaN HEMT biosensor suggests that this biosensor might be a useful tool for the prostate cancer screening.

关 键 词：二维电子气 高电子迁移率晶体管 生物传感器 前列腺特异性抗原 

分 类 号：TN32[电子电信—物理电子学]