泡沫碳化硅中碳化硅纳米线的原位生长及结构表征  

In Situ Growth of SiC Nanowires in SiC Foam and Its Microstructure

作　　者：高世涛[1] 余金山[1] 周新贵[1] 张长瑞[1] 

机构地区：[1]国防科学技术大学新型陶瓷纤维及其复合材料重点实验室

出　　处：《航空制造技术》2014年第6期126-128,共3页Aeronautical Manufacturing Technology

基　　金：国家自然科学基金项目(51372274);湖南省高校科技创新团队支持计划;陶瓷纤维与复合材料国防科技大学创新群体计划资助

摘　　要：利用蛋白质发泡法制备泡沫SiC陶瓷,以聚碳硅烷(PCS)为先驱体,采用化学气相沉积(CVD)工艺在泡沫SiC中原位生长出大量SiC纳米线。使用X射线衍射仪,扫描电子显微镜和透射电子显微镜对纳米线的物相组成和微观形貌进行表征。结果表明,纳米线直径为100～200nm,长度达到数百微米,均匀分布在泡沫SiC的气孔中,纳米线由沿<1 1 1>方向生长的β-SiC晶体组成,在纳米线顶端未发现球状催化剂存在,表明其生长机理主要为气-固(VS)生长机理。Proteins are used as foaming agents and curing agents to fabricate SiC foam and large areas of SiC nanowires are synthesized in the SiC foam by chemical vapor deposition method. Polycarbosilane is used as the precursor. The morphology, microstructure and composition of the prepared SiC nanowires were characterized by XRD, SEM and TEM. The results show that the nanowires exist in the channels of the foam body with diameters in the range of 100-200 nanometers and length of hundreds micrometers, and are composed of a single-crystal β-SiC structure with the 〈1 1 1〉 growth direction. A vaporsolid mechanism process is discussed as a possible growth mechanism of the β-SIC n/inowires.

关 键 词：碳化硅 纳米线 泡沫陶瓷 生长机理 

分 类 号：TQ174.1[化学工程—陶瓷工业]