ATLEED研究6H-SiC(0001)(3^(0.5)×3^(0.5))R30°重构表面  

STUDY ON (3^(0.5)×3^(0.5))R30° RECONSTRUCTION OF 6H-SiC(0001) SURFACE BY ATLEED

作　　者：邓丙成[1] 陈滢 徐耕[2] 陈文华 何永健 谢茂海 唐叔贤[3] 

机构地区：[1]华南建设学院西院基础部,广州510405 [2]中山大学物理系,广州510275 [3]香港大学物理系

出　　处：《物理学报》2001年第1期106-110,共5页Acta Physica Sinica

摘　　要：低能电子衍射 (LEED)对 6H SiC(0 0 0 1) (3× 3)R30°表面的研究结果表明 ,该表面有 1/3单层的Si原子吸附在T4 空位上与第一个SiC复合层中的三个Si原子键接 ,它们之间的垂直距离为 0 171nm .通过对该表面 10个非等价垂直入射衍射束的自动张量低能电子衍射 (ATLEED)计算 ,得到“最佳结构”由于表面SiC复合层堆积顺序不同而产生的三种表面终止状态 (surfacetermination)的混合比例为S1∶S2∶S3 =15∶15∶70 ,理论计算与实验I V曲线比较得到可靠性因子RVHT=0 .16 5 ,RP=0 .142 。The result on 6H SiC(0001) (3×3) R 30° surface obtained by low\|energy electron diffraction(LEED) shows that 1/3 monolayer Si atoms were absorbed on T\-4 hollow sites and bonded to three Si atoms in the first SiC bilayer with a distance of 0.171nm. The calculation result of ATLEED shows that the ratio of three different surface terminations, distinguished by the stacking fault sequence of SiC bilayers, in the \!best\|fit structure\' obtained by analysis of 10 non\|equivalent normal incidence beam sets is \%S1∶S2∶S3=15∶15∶70\%. The values of average \%R\%\-\{VHT\}=0.165 and \%R\%\-P=0.142 indicate that the surface growth was consistent with the mechanism of step\|flow growth corresponding to total energy minimum.

关 键 词：表面重构 表面终止状态 LEED 碳化硅 半导体 

分 类 号：TN304[电子电信—物理电子学]