离轴磁控溅射法生长1-3维PZT-NFO纳米复合薄膜  被引量:1

Preparation of 1-3 Dimensional PZT-NFO Nanocomposite Films by Off-axis Magnetron Sputtering

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作  者:张辉[1] 马永军 王艺程[1] 文丹丹[1] 叶飞[3] 白飞明[1] 

机构地区:[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054 [2]包头市第二热电厂,包头014030 [3]大连理工大学材料科学与工程学院,大连116024

出  处:《无机材料学报》2014年第4期371-376,共6页Journal of Inorganic Materials

基  金:国家重大基础研究资助项目(2012CB933104);国家自然科学基金(61271031);中央高校科研业务费资助项目(ZYGX2010X009)~~

摘  要:采用90°离轴磁控溅射法,在MgAl2O4(001)单晶基片上自组装生长了Pb(Zr0.52Ti0.48)O3-NiFe2O4(PZT—NFO)复合磁电薄膜,并研究了基片温度、氩氧比和溅射功率等因素对薄膜结构和性能的影响。结果表明,适合生长PZT-NFO薄膜的条件为基片温度800℃,氩氧比1:1,溅射功率160W。XRD测试显示,PZT-NFO薄膜为外延生长薄膜,且PZT相与NFO相之间的垂直晶格失配非常小。AFM和SEM结构观察表明,薄膜具有清晰的1-3维纳米复合结构,铁磁相NFO纳米柱直径约为80~150nm。降低氩氧比有助于NFO相的形成,但溅射功率过大会造成1-3维结构向无规则0-3维结构转变。磁性能测量表明纳米复合薄膜的饱和磁化强度在120~160kA/m之间,低于块体的NFO相,可能是由于两相的界面扩散所造成。Self-assembled nanocomposite Pb(Zr0.52Ti0.48)O3-NiFe204 films were prepared on the (001)-oriented MgA1204 substrates by a 90° off-axis magnetron sputtering method. The influences of substrate temperature, argon over oxygen ratio and sputtering power on the structure and properties of PZT-NFO nanocomposite films were studied. The optimal growth conditions are substrate temperature of 800 ℃, argon over oxygen ratio of 1:1 and sputtering power of 160 W. XRD studies reveal that the PZT-NFO film is epitaxial along both the in-plane and out-of-plane directions, and the vertical lattice mismatch between the PZT phase and the NFO phase is very small. AFM and SEM analysis show that the PZT-NFO films have clear 1-3 dimensional nanocomposite structure, and the diameter ofNFO nanorods is 80-150 nm. Further decreasing argon over oxygen ratio is beneficial for the formation of NFO. However, increasing RF power causes a transition from an 1-3 dimensional nanocomposite to a 0-3 dimensional chaotic structure. Magnetic measurement shows that the saturation magneti- zation of NFO phase is 120-160 kA/m, lower than that of bulk NFO phase, possibly due to the interracial diffusion between the NFO and the PZT phases.

关 键 词:纳米复合 磁电效应 磁控溅射 自组装 

分 类 号:TM271[一般工业技术—材料科学与工程] O482[电气工程—电工理论与新技术]

 

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