富磷熔体生长InP单晶的均匀性研究  

Study on the Uniformity of InP Single Crystals Grown from P-rich Melt

作　　者：杨帆[1] 杨瑞霞[1] 陈爱华[1] 孙聂枫[2] 刘志国[1] 李晓岚[2] 潘静[2] 

机构地区：[1]河北工业大学信息工程学院,天津300401 [2]中国电子科技集团公司第十三研究所专用集成电路国家重点实验室,石家庄050051

出　　处：《人工晶体学报》2014年第3期497-501,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(61076004);高等学校博士学科点专项科研基金(20101317110001)

摘　　要：采用原位磷注入合成法在高压单晶炉内合成富磷的磷化铟(InP)熔体,并利用液封直拉法(LEC)生长出了掺硫及掺铁单晶材料。分别用快速扫描光荧光谱技术(PL-Mapping)、扫描电镜和傅里叶红外光谱对富磷单晶样品进行了研究。结果表明,在富磷条件下拉制的InP单晶会出现孔洞,致使在孔洞周围及远离区域晶体结晶质量和晶格常数存在差异,并且孔洞的存在会造成杂质分布的不均匀性。由于孔洞附近区域具有较高浓度的缺陷,而缺陷对杂质的吸引作用致使孔洞附近区域杂质浓度较远离孔洞区域有所增加。P-rich InP melt were synthesized in a high pressure puller by in-situ injection technique, the Fe doped and S doped InP crystals were grown by liquid encapsulated Czochraski （LEC） method. The uniformity of differently doped InP wafer samples were investigated by high-resolution X-ray diffraction, rapid photolumineseence mapping, scanning electron microscopy and fourier transform infrared spectroscopy, respectively. The experimental results indicate that there are irregular pores existed in the P-rich LEC grown InP ingots. These pores induced the inhomogeneity of the crystal quality and lattice constant. The uniformity of the dopant distribution across the wafer is influenced by these pores. The high concentration of defects surrounded the pores causes the increase of impurity concentration for that region.

关 键 词：磷化铟 富磷 液封直拉法 缺陷 

分 类 号：TN304.2[电子电信—物理电子学]