掺钛氧化锌半导体薄膜制备及其光学性质的研究  

Preparation and Optical Properties of TiO_2-Doped Zinc Oxide Semiconductor Thin Films

作　　者：钟志有[1,2] 兰椿 汪浩[1] 

机构地区：[1]中南民族大学 电子信息工程学院,武汉430074 [2]中南民族大学 智能无线通信湖北省重点实验室,武汉430074

出　　处：《中南民族大学学报（自然科学版）》2014年第1期51-57,共7页Journal of South-Central University for Nationalities：Natural Science Edition

基　　金：湖北省自然科学基金资助项目(2011CDB418);中南民族大学学术团队基金资助项目(XTZ09003)

摘　　要：以二氧化钛(TiO2)掺杂的氧化锌(ZTO)陶瓷靶作为溅射源材料,采用射频磁控溅射工艺在玻璃衬底上沉积了ZTO半导体薄膜,利用可见-紫外光分光光度计、四探针仪测试以及多种光学表征方法,研究了陶瓷靶中TiO2含量对ZTO薄膜光学性质和光电综合性能的影响.实验结果表明:ZTO薄膜的折射率表现为正常的色散特性,其色散行为遵循有效单振子模型.TiO2含量对ZTO薄膜的电阻率、透过率、折射率、消光系数和光学带隙等具有不同程度的影响,当TiO2的质量分数为3%时,ZTO薄膜的电阻率最低、可见光平均透过率最高、光电综合性能最好.Transparent conducting TiO 2-doped zinc oxide （ ZTO ） thin films were deposited by radio-frequency magnetron sputtering method using the ceramic target fabricated by sintering the mixture of TiO 2 and ZnO nanometer powder .The influence of TiO 2 content on optical and electrical properties of the ZTO thin films was investigated by four -point probe , UV-visible spectrophotometer and optical characterization methods .The results demonstrate that the deposited thin films possess the normal dispersion characteristics in visible region .The dispersion relation of the refractive index can be well explained by the single-effective-oscillator model .The electrical resistivity , optical transmittance , refractive index , extinction coefficient and optical band gap of the deposited films are closely related to the TiO 2 content.With the mass fraction of 3% of TiO2 doping , the ZTO thin film has the lowest electrical resistivity , the highest average visible transmittance and the maximum figure of merit .

关 键 词：氧化锌薄膜 掺杂 光学性质 

分 类 号：TM914[电气工程—电力电子与电力传动]