Bi_(12)SiO_(20)晶体的生长习性  

GROWTH HABIT OF Bi_(12)SiO_(20) CRYSTAL

作　　者：魏世道[1] 张尚安[1] 刘庆生 韩奇阳 

机构地区：[1]中国科学院安徽光学精密机械研究所

出　　处：《硅酸盐学报》1991年第6期513-518,共6页Journal of The Chinese Ceramic Society

摘　　要：分别沿[001],[110]及[111]3种方向用提拉法生长Bi_(12)SiO_(20)晶体,研究了生长条件对晶体形态的影响。应用PBC理论,分析了各晶面的特性:{100}和{110}为F面,{211}为S面,{111}属于K面。并依据连接能的计算,得到晶面的重要性顺序。PBC解析形态与在特定条件下生长的晶体形态相当一致。Bismuth silicon oxide (Bi_(12)SiO_(20)) crystals have been grown by means of the Czochralski technique in [001], [110], [111]crystallographic orientation respectively. The influence of growth conditions on crystal morphology is investigated. The character of crystal faces has been analysed by means of PBC theory. It is found that {100} and {110} behave as a F face, {211} as a S face and {111} as a K face.The order of morphological significance of these faces is obtained according to the calculation of their attachment energy. The theoretical morphology of Bi_(12)SiO_(20) agrees well with the morphology of Bi_(12)SiO_(20) which has been grown under special conditions.

关 键 词：单晶生长 晶体形态 Bi12SiO20 

分 类 号：O782[理学—晶体学]