硅基半导体芯片激光红外显微成像系统研究  

The Micro-imaging System of Infrared Laser on Silicon-based Semiconductor Chip

作　　者：贺锋涛[1] 王晓琳[1] 张凯[1] 米波[1] 张冠芳[1] 

机构地区：[1]西安邮电大学电子工程学院,西安710121

出　　处：《光子学报》2014年第3期71-74,共4页Acta Photonica Sinica

基　　金：国家自然科学基金项目(No.61201193);陕西省自然基金基础研究计划项目(No.2012JQ8014)资助

摘　　要：为了解决可见光显微成像技术无法实现硅基芯片内部结构观测的问题,根据1 064nm的红外激光对硅材料具有一定穿透深度的特性,设计了一种硅基半导体芯片激光红外显微成像系统.该系统采用数值孔径为0.42的长工作距显微物镜,通过音圈电机振动多模石英光纤消除散斑噪音,由系统观察CD-RW盘片道间距,表明系统分辨率可达到1.6μm,接近理论值,实现了对芯片厚度为70μm的静态随机存储器内部结构显微成像的观测.The visible micro-imaging technology cannot observe the chip internal structure. In order to sovle this issue, a silicon-based semiconductor chip laser infrared microscopy imaging system was designed. The characteristic of 1 064 nm wavelength of infrared laser that has a certain penetration depth for silicon material was applied for the design. A microscope objective with numerical aperture of 0.42 was adopted in this system. The multimode silica fiber vibration method was used to eliminate the speckle noise. The track pitch of CD-RW disk image was observed by microscope infrared imaging. The results showed that the system resolution can reach 1.6 μm and close to the theoretical value. So it can achieve internal structure observation of static RAM of which the thickness of the chip is 70 μm.

关 键 词：半导体芯片 激光红外显微成像 多模石英光纤 音圈电机 

分 类 号：TN219[电子电信—物理电子学]