硫化时间对铜锌锡硫薄膜特性的影响  

Influence of Sulfurization Time on Phase Structures of Cu_2ZnSnS_4 Thin Films

作　　者：谢敏[1] 庄大明[1] 李博建 郭力[1] 宋军[1] 

机构地区：[1]先进成形制造教育部重点实验室清华大学材料学院,北京100084

出　　处：《真空科学与技术学报》2014年第4期391-395,共5页Chinese Journal of Vacuum Science and Technology

基　　金：清华大学自主计划研究项目(2010Z08113)

摘　　要：用金属预制膜硫化法制备铜锌锡硫薄膜，分别采用了60，90，120和180min的硫化时间进行硫化，考察了硫化时间对制备的Cu2ZnSnS4（CZTS）薄膜特性的影响。研究得出：在四种硫化时间下均能得到主要组成相为CZIS的薄膜，薄膜成分基本一致，晶粒尺寸均接近2μm。但不同硫化时间下得到的薄膜的相组成和沿厚度方向的成分分布不同。硫化时间为60～120min时薄膜内除主要组成相CZIS之外有少量SnS存在，硫化时间延长至180min时不再有SnS但开始有少量ZnS出现，这一转变与硫化过程中Sn的流失有关。硫化时间为60，90和180min时薄膜中均出现了Cu和盈在薄膜厚度方向的分布不均，Cu易于在表面富集，办易于在薄膜中部富集。硫化时间为120min时能得到Cu、Zn、Sn、S均沿厚度方向均匀分布的薄膜。Cu2ZnSnS4 （CZTS） thin films were synthesized by sulfurizing the metallic precursors, deposited by dual-target ahernative magnetron sputtering. The influence of the sulfurization conditions, especially the sulfurization time, on the properties of CZTS fdms was evaluated. The microstmctures and phase structures were characterized with X-ray diffraction, Raman spectroscopy, and scanning electron microscopy. The results show thatsulfurization time significantly af-fects the microstmctures and depth profiles of CZTS films. For example, sulfurized for 60-120 min,smaU amount of SnS phase was found to coexist with CZTS phase in grains,about 2 μm in size; sulfurized for 180 min,small amount of ZnS showed up instead of SnS, possibly because of loss of Sn in sulfurization. Sulfurized for 60,90, and 180 min, Cu segregated to the surfaces and Zn accumulated in the middle of CZTS films. CZTS films with uniform longitudinal distributions of Cu, Zn,Sn,and S contents were obtained in films sulfurized for 120 min.

关 键 词：薄膜 铜锌锡硫 硫化 硫化时间 

分 类 号：TK513.5[动力工程及工程热物理—热能工程]