溅射沉积Cu/W纳米多层膜结构与性能  

Structures and Properties of Cu/W Nanostructured Multilayers Deposited by Sputtering

作　　者：郭中正[1] 孙勇[1] 段永华[1] 彭明军[1] 吴大平[1] 朱雪婷[1] 

机构地区：[1]昆明理工大学稀贵及有色金属先进材料教育部重点实验室,云南昆明650093

出　　处：《稀有金属材料与工程》2014年第4期906-910,共5页Rare Metal Materials and Engineering

基　　金：国家高技术研究发展计划"863"资助项目(2009AA03Z512);国家自然科学基金(51201079);稀贵及有色金属先进材料教育部重点实验室开放研究项目(ZDS2010012B)

摘　　要：以单晶硅和聚酰亚胺为衬底，用磁控溅射沉积调制周期λ=25～150nm、调制比η=0．5～2的Cu／W纳米多层膜，用XRD、SEM、EDS、AFM、微力测试系统、纳米压痕仪和四探针法对多层膜微观结构、表面形貌和力学及电学性能进行研究。结果表明：λ和η显著影响多层膜结构和性能。多层膜Cu层和w层均为纳米晶结构，分别呈Cu（111）和W（110）择优取向。W（110）晶面间距减小且减幅与1/λ或η值呈正相关，Cu／W层间界面处存在扩散混合层。表面Cu层晶粒尺寸随Cu层厚增加而增大。裂纹萌生临界应变εc总体上随λ增大或η减小而下降，屈服强度σ0.2、显微硬度H和电阻率ρ总体上均与λ或η呈负相关。因Cu层和w层厚度随λ或η的变化而改变，相应地改变了Cu层晶粒度及其晶界密度、w层体积分数和Cu／W层间界面数量，使位错运动能力及电子散射效应变化，最终改变Cu／W纳米多层膜性能。Silicon-supported and polyimide-based Cu/W nanostructured multilayers with modulation period λ=25-150 nm and modulation ratio η=0.5-2 were deposited by magnetron sputtering. The microstructure, surface topography, mechanical and electrical properties of multilayers were investigated by XRD, SEM, EDS, AFM, microforce testing system, nanoindentor and four point probe method. The results indicate that the structure and properties of multilayers are influenced significantly by λ and η. The nanocrystalline structure Cu and W layers of multilayers are of Cu（111） and W（110） preferred orientation, respectively. The interplanar spacing of W（110） decreases and the descending range is correlated positively with 1/λ or η, and there is a diffusion intermixing layer on the interface of Cu/W layers. The grain size of the uppermost Cu layer increases with the increasing Cu layer thickness. The critical strain of crack initiation εc decreases generally with the increasingγ or decreasing η, while the yield strength σ0.2, microhardness H and electrical resistivity ρ are correlated negatively with λ or η. The changed thickness of Cu layer and W layer with the varying λ or ηis corresponding to the changes in the grain size and the grain boundary density of Cu layer, the volume fraction of W layer and the amount of Cu/W interface, which cause the ability of dislocation motion and electron scattering effects to change, further to change the properties of Cu/W nanomuRilayers

关 键 词：CU W纳米多层膜 调制周期 调制比 屈服强度 电阻率 

分 类 号：TB383.1[一般工业技术—材料科学与工程] TB383.2