Surface Passivation of Nanocrystalline Silicon Powder Derived from Cryomilling  

作　　者：王志浩 HUANG Zhifeng 陈斐 SHEN Qiang ZHANG Lianmeng 

机构地区：[1]State Key Lab of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology [2]Key Laboratory of Advanced Technology for Specially Functional Materials, Ministry of Education, Wuhan University of Technology

出　　处：《Journal of Wuhan University of Technology(Materials Science)》2014年第1期65-69,共5页武汉理工大学学报（材料科学英文版）

基　　金：Supported by the National Natural Science Foundation of China(No.51202171);the Specialized Research Fund for the Doctoral Program of Higher Education of China(No.20120143120004);the"111"Project(No.B13035)

摘　　要：The surface passivation mechanism of nanocrystalline silicon powder was studied. The liquid nitrogen/argon was used as the medium to prepare the nanocrystalline silicon powder, using a cryomilling technology. The X-ray diffraction, transmission electron microscopy, plasma emission spectroscopy and infrared spectrum were used to analyze the prepared samples, and density functional theory was used to investigate the cryomilling process. For nanocrystalline silicon powder cryomilled with liquid N2, the amorphous outer layer with N element is formed On the surface, and chemisorption caused by the formation of Si-N-Si bond leads to the surface passivation; although physisorpfion also he confirmed, the Si-N bond is steady after exploded in air for 30 days and no new bond is observed. For nanocrystalline silicon powder cryomilled with liquid At, no new chemical bond is Observed, Ar element absorbs on the surface of the prepared powder only through physisorption, and after exploded in air for 30 days, a Si-O bond can be observed obviously.The surface passivation mechanism of nanocrystalline silicon powder was studied. The liquid nitrogen/argon was used as the medium to prepare the nanocrystalline silicon powder, using a cryomilling technology. The X-ray diffraction, transmission electron microscopy, plasma emission spectroscopy and infrared spectrum were used to analyze the prepared samples, and density functional theory was used to investigate the cryomilling process. For nanocrystalline silicon powder cryomilled with liquid N2, the amorphous outer layer with N element is formed On the surface, and chemisorption caused by the formation of Si-N-Si bond leads to the surface passivation; although physisorpfion also he confirmed, the Si-N bond is steady after exploded in air for 30 days and no new bond is observed. For nanocrystalline silicon powder cryomilled with liquid At, no new chemical bond is Observed, Ar element absorbs on the surface of the prepared powder only through physisorption, and after exploded in air for 30 days, a Si-O bond can be observed obviously.

关 键 词：surface passivation nanocrystalline silicon powder CRYOMILLING 

分 类 号：TB383.1[一般工业技术—材料科学与工程]