50～75MHz550W脉冲功率LDMOSFET器件研制  

Design and Manufacture of the 50-75 MHz 550 W Pulsed Power LDMOSFET

作　　者：邓建国[1] 张晓帆[1] 刘英坤[1] 胡顺欣[1] 孙艳玲[1] 郎秀兰[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2014年第5期365-369,共5页Semiconductor Technology

摘　　要：介绍了射频功率横向双扩散金属氧化物半导体场效应晶体管（LDMOSFET）器件的设计原理，分析了影响器件输出功率、增益、效率和可靠性的关键因素。报道了采用扩散通源结构实现源极到衬底的低阻导通，采用TiSi，／多晶硅复合栅结构降低栅电阻以及采用单层屏蔽栅场板结构和双层金属布线工艺成功研制出一种甚高频（VHF），大功率LDMOSFET器件。器件在工作频率50-75MHz、工作电压36V、工作脉宽10ms和占空比30％的工作条件下带内输出功率大于550W、功率增益大于20dB、漏极效率大于60％和抗驻波比大于5：1，表现出了良好的微波性能。器件经过高温反偏、高温存储和高低温循环等可靠性筛选，性能稳定，具备工程化实用能力。The design principles of the radio frequency lateral double-diffused metal-oxide-semicon- ductor field effect transistor （LDMOSFET） devices were introduced. The key points that affect the output power, gain, efficiency and reliability were analyzed. A very high-frequency （VHF） band high power LDMOSFET device was accomplished by adopting the diffusion sinker structure to realize the low on-state resistor, making use of the TiSi2/polysilicon stack to reduce gate resistor, and using the farad gate shield with single field plate and double-layers metallization. The research results show that the device presents good RF performances of the output power of more than 550 W with at least 20 dB power gain, more than 60% drain efficiency and endured over 5 ： 1 VSWR at 50-75 MHz under the conditions of 36 V working voltage, 10 ms pulse width and 30% duty cycle. the ability to practical engineering were presented by a series of The good stabilization performance and reliability screening

关 键 词：LDMOSFET 硅 甚高频(VHF) 长脉冲 大功率 

分 类 号：TN386[电子电信—物理电子学]