基于TST结构600 V VDMOS终端的设计与优化  

Optimal Design of Termination Structure for 600 V VDMOS Based on TST

作　　者：于莉珊 冯全源[1] 

机构地区：[1]西南交通大学微电子研究所,成都610031

出　　处：《微电子学》2014年第2期256-259,共4页Microelectronics

基　　金：国家自然科学基金重大项目(60990320;60990323);国家自然科学基金面上项目(61271090);国家高技术研究发展(863)计划重大项目(2012AA012305);四川省科技支撑计划项目(2012GZ0101);成都市科技计划资助项目(12DXYB347JH-002)

摘　　要：以沟槽负斜坡终端(Trench and Slope Termination,TST)结构为研究对象,分析了该结构提高终端表面耐压的原理,利用TCAD软件对该结构进行电性能仿真研究,注意到击穿机制在不同沟槽深度下有所不同。针对两种击穿机制,进行负斜坡倾角优化;最后,从生产角度对TST终端进行优化,以提高其工艺容差。仿真结果表明,经过优化设计的600VTST终端结构,其宽度为127μm,仅为相同耐压水平的场限环场板复合结构终端的50%。提出的设计方法可广泛应用于高压VDMOS的终端设计。Trench and slop termination（TST）was investigated,and the mechanism of the structure to improve breakdown voltage of the termination was analyzed.The relationship between structural parameters of TST and breakdown voltage of the termination was studied by using TCAD simulator.It has been noted that different trench depths led to different avalanche position.The slope angle was optimized for both mechanisms.Finally,TST structure was optimized from the process point of view to improve its process tolerance.Simulation results indicated that the optimized 600VTST structure had a width of 127μm,which was only 50% of the size of a field limiting ring and field-plate combinational termination structure with the same breakdown voltage. The proposed optimization methods could be widely used for designing termination of high voltage VDMOS.

关 键 词：沟槽负斜坡终端 功率场效应管 功率器件 

分 类 号：TN386[电子电信—物理电子学]