纳米压印技术制备Si基GaN纳米柱图形化衬底  

GaN Nanocolumns Patterned Substrates on Silicon Prepared by Nanoimprint Lithography

作　　者：周平[1] 任霄钰 梁望[1] 苑进社[1,2] 

机构地区：[1]重庆师范大学物理与电子工程学院,重庆401331 [2]光电功能材料重庆市重点实验室,重庆401331

出　　处：《重庆师范大学学报（自然科学版）》2014年第3期97-99,F0002,共4页Journal of Chongqing Normal University:Natural Science

基　　金：重庆高校优秀成果转化项目资助(No.kjzh11210)

摘　　要：采用纳米压印和反应离子刻蚀技术,通过实验研究反应离子刻蚀时间与GaN纳米柱高度的相关性,成功地在Si基GaN衬底上制备出了GaN纳米柱图形化衬底。SEM表征分析发现在图形化衬底上所制备的GaN纳米柱形貌均匀、排列整齐;室温光致发光光谱分析发现GaN纳米柱图形化衬底与GaN材料相比带边发光峰出现2.1nm的红移,发光强度增强。研究结果表明GaN纳米柱内应力得到释放且具有光子晶体的作用。In this work, we have successfully obtained GaN nanocolumns patterned substrates on OaN template on Silicon using the method of nanoimprint lithography and reactive ion etching technology. To obtain the patterned substrates, we studied the correla- tion of the time of reactive ion etching and the height of GaN nanocolumns. SEM analysis found that the obtained GaN nanocolumns patterned substrates had the features of uniform morphologies and orderly ranks. Room-temperature PL spectrum analysis found that the band edge emission peak of GaN nanocolumns patterned substrates appeared 2.1 nm redshift compared with GaN bulk ma- terials and the emission intensities were stronger. Further research showed that the stress was released in GaN nanocolumns and they have effect of photonic crystal.

关 键 词：纳米压印 GaN纳米柱 PL谱 

分 类 号：O614.371[理学—无机化学]