ZnO半导体电导型X射线探测器件研究  

Study of ZnO photoconductive X-ray detector

作　　者：赵小龙[1] 康雪[1] 陈亮[2] 张忠兵[2] 刘金良[2] 欧阳晓平[2] 彭文博[1] 贺永宁[1] 

机构地区：[1]西安交通大学,电子与信息工程学院,西安710049 [2]西北核技术研究所,辐射探测科学研究中心,西安710024

出　　处：《物理学报》2014年第9期408-413,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60876038;11375144);"ZnO半导体纳米结构核辐射探测机理研究";西安交通大学基本科研业务费学科综合交叉科研项目资助的课题~~

摘　　要：本文制备了基于ZnO纳米线阵列和ZnO薄膜的Ag-ZnO-Ag电导型X射线探测器件,研究了它们对X射线的响应特性.薄膜器件在100 V偏置时的响应度达到0.12μC/Gy,纳米线阵列器件在50 V偏压下的响应度达到0.17μC/Gy.器件工作机理研究表明,器件的响应过程与表面氧吸附与解吸附效应有关,氧气吸附与解吸附过程使得X射线辐照下的载流子寿命大幅度增加,从而使得器件对X射线具有较高的响应度.本文研究结果表明ZnO薄膜和纳米线阵列器件在X射线剂量测量领域具有应用前景.Ag-ZnO-Ag X-ray detectors based on ZnO film and nanowires are both fabricated in this paper. Results of con-tinuous X-ray radiation measurement show that the two detectors have high responsivity： the responsivity of the ZnO film device is about 0.12 μC/Gy under a 100 V bias voltage, and that of the ZnO nanowires device is about 0.15 μC/Gy under a 50 V bias voltage. Surface effect due to the absorption and desorption of oxygen on the ZnO surface, which makes the carrier lifetime increase, is decisive to the high responsivity. ZnO film and nanowires have their potential applications in the X-ray dose rate measurement.

关 键 词：ZNO薄膜 ZNO纳米线 X射线探测 氧吸附 

分 类 号：O484[理学—固体物理] TB383.1[理学—物理]