氢气在金属合金制程中对MOSFET界面态的影响  

Effect of Pure H2 Metal Alloy on Interface States of MOSFET

作　　者：刘洁薇 郁志芳 曾红林 

机构地区：[1]中芯国际集成电路制造〈上海〉有限公司,中国上海201203

出　　处：《科技视界》2014年第9期50-51,共2页Science & Technology Vision

摘　　要：金属-氧化物半导体场效应晶体管(MOSFET)的界面态影响器件的正常性能发挥。本文采用在合金制程中通入氢气的方法,并通过电荷泵(Charge Pumping)技术手段测量定性,反映氢气在金属合金(Metal Alloy)制程中对界面态的改善作用。实验结果表明界面态密度的降低不仅与合金制程中通氢气的时间有关,而且与氢气的流量也有关。为工艺改进和提升器件成品率,可靠性提供重要参考信息。Si-SiO2 Interface states in metal-oxide-silicon field effect transistors （MOSFET） impact device normal performance. We adopt pure H2 metal alloy and use charge pumping measurement to reflect improvement of pure H2 alloy on interface states in MOSFET. In this paper, we present the experimental results on the effect of H2 ambiences on the interface states density reduction and the reduction is not only related with the alloy time, but also related with H2 flow rate. Therefore, the experiment can provide important information for the process optimization, yield and reliability improvement.

关 键 词：氢气 表面态 电荷泵技术 H2 

分 类 号：TN304.05[电子电信—物理电子学]