A 800 V dual conduction paths segmented anode LIGBT with low specific on-resistance and small shift voltage  

作　　者：毛焜 乔明 张波 李肇基 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science & Technology of China

出　　处：《Journal of Semiconductors》2014年第5期36-41,共6页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.61376080)

摘　　要：A dual conduction paths segmented anode lateral insulated-gate bipolar transistor （DSA-LIGBT） which uses triple reduced surface field （RESURF） technology is proposed. Due to the hybrid structures of triple RESURF LDMOS （T-LDMOS） and traditional LIGBT, firstly, a wide p-type anode is beneficial to the small shift voltage （VST） and low specific on-resistance （Ron,sp） when the anode voltage （VA） is larger than VST. Secondly, a wide n-type anode and triple RESURF technology are used to get a low Ron,sp when VA is less than VST. Meanwhile, it can accelerate the extraction of electrons, which brings a low turn-off time （Toff）. Experimental results show that： VST is only 0.9 V, Ron,sp （Ron × Area） are 11.7 and 3.6 Ω · mm^2 when anode voltage VA equals 0.9 and 3 V, respectively, the breakdown voltage reaches to 800 V and Toff is only 450 ns.A dual conduction paths segmented anode lateral insulated-gate bipolar transistor （DSA-LIGBT） which uses triple reduced surface field （RESURF） technology is proposed. Due to the hybrid structures of triple RESURF LDMOS （T-LDMOS） and traditional LIGBT, firstly, a wide p-type anode is beneficial to the small shift voltage （VST） and low specific on-resistance （Ron,sp） when the anode voltage （VA） is larger than VST. Secondly, a wide n-type anode and triple RESURF technology are used to get a low Ron,sp when VA is less than VST. Meanwhile, it can accelerate the extraction of electrons, which brings a low turn-off time （Toff）. Experimental results show that： VST is only 0.9 V, Ron,sp （Ron × Area） are 11.7 and 3.6 Ω · mm^2 when anode voltage VA equals 0.9 and 3 V, respectively, the breakdown voltage reaches to 800 V and Toff is only 450 ns.

关 键 词：LIGBT segmented anode shift voltage specific on-resistance 800 V 

分 类 号：TN322.8[电子电信—物理电子学]