云南高校图书馆联盟文献共享服务平台- LIGBT

LIGBT: 作品数：31被引量：15H指数：2; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：张波罗小蓉李泽宏魏杰张金平更多>>; 相关机构：电子科技大学重庆邮电大学电子科技大学广东电子信息工程研究院南京邮电大学更多>>; 相关期刊：《半导体技术》《Chinese Physics B》《电子学报》《北京工业大学学报》更多>>; 相关基金：国家自然科学基金浙江省自然科学基金国家重点基础研究发展计划国防基金更多>>

Novel fast-switching LIGBT with P-buried layer and partial SOI被引量：1: 《Chinese Physics B》2021年第2期462-466,共5页Haoran Wang Baoxing Duan Licheng Sun Yintang Yang; Project supported by the National Basic Research Program of China(Grant No.2015CB351906);the Science Foundation for Distinguished Young Scholars of Shaanxi Province,China(Grant No.2018JC-017)。; A novel silicon-on-insulator lateral insulated gate bipolar transistor(SOI LIGBT)is proposed in this paper.The proposed device has a P-type buried layer and a partial-SOI layer,which is called the BPSOI-LIGBT.Due to t...; 关键词：P-type buried layer breakdown voltage electric field modulation turn-off time

Snapback-free shorted anode LIGBT with controlled anode barrier and resistance: 《Chinese Physics B》2021年第2期557-562,共6页Shun Li Jin-Sha Zhang Wei-Zhong Chen Yao Huang Li-Jun He Yi Huang; Project supported by the National Natural Science Foundation of China(Grant Nos.61604027 and 61704016);the Fund from Chongqing Technology Innovation and Application Development(Key Industry Research and Development),China(Grant No.cstc2018jszx-cyzd0646)。; A novel shorted anode lateral-insulated gate bipolar transistor(SA LIGBT)with snapback-free characteristic is proposed and investigated.The device features a controlled barrier V_(barrier)and resistance R_(SA)in anode...; 关键词：shorted anode lateral-insulated gate bipolar transistor SNAPBACK BARRIER trade-off

A snapback-free and high-speed SOI LIGBT with double trenches and embedded fully NPN structure: 《Journal of Semiconductors》2020年第10期50-55,共6页Chenxia Wang Jie Wei Diao Fan Yang Yang Xiaorong Luo; supported by Postdoctoral Innovative Talent Support Program under Grant BX20190059;the China Postdoctoral Science Foundation under Grant 2019M660235;the Sichuan Science and Technology Program under Project 2018JY0555;the Science and Technology on Analog Integrated Circuit Laboratory under Project 6142802180509。; A novel 600 V snapback-free high-speed silicon-on-insulator lateral insulated gate bipolar transistor is proposed and investigated by simulation.The proposed device features an embedded NPN structure at the anode side...; 关键词：snapback-free fast switching SOI LIGBT trench gate E_(off)

一种利用高介电常数薄膜改进的快速关断SOI-LIGBT: 《微电子学》2020年第4期584-588,共5页林靖杰陈为真程骏骥陈星弼; 国家自然科学基金青年基金资助项目(61604030)。; 介绍了一种利用高介电常数薄膜改进的、制作于绝缘衬底上的横向绝缘栅双极型晶体管(SOI-LIGBT)。一方面,覆盖在硅表面的高介电常数薄膜具有引导电通量的作用,可优化器件漂移区的表面电场分布,在器件耐压等级不变的情况下,节约芯片面积,...; 关键词：LIGBT 高介电常数关断损耗功率半导体器件

Design and analysis of a NMOS triggered LIGBT structure for electrostatic discharge protection: 《Journal of Semiconductors》2019年第5期47-50,共4页Li Tian Jianbing Cheng Cairong Zhang Li Shen Lei Wang; supported by National Natural Science Foundation of China(Grant No.61274080); A novel NMOS triggered LIGBT(NTLIGBT) structure is proposed for electrostatic discharge(ESD) protection in this paper. The structure utilizes internal NMOS to trigger SCR-like structure in LIGBT. The trigger voltage i...; 关键词：ESD NMOS triggered LIGBT(NTLIGBT) TRIGGER VOLTAGE HOLDING VOLTAGE ESD design window

一种硅基新结构TG VDC SOI LIGBT: 《电子科技》2018年第11期11-14,共4页张海鹏何健白建玲张强王颖王彬; 国家自然科学基金(61774052); 针对传统的槽栅SOI LIGBT无法满足日益发展的智能功率集成电路对耐压性能和大电流处理能力需求的问题,文中提出了一种槽栅纵向双单元SOI LIGBT新结构。该结构在传统槽栅SOI LIGBT的漂移区引入了一个第二埋氧层,将器件隔离成上下两个并联...; 关键词：槽栅双单元智能功率集成电路通态电流击穿电压

A snapback-free TOL-RC-LIGBT with vertical P-collector and N-buffer design: 《Chinese Physics B》2018年第8期627-632,共6页Weizhong Chen Yao Huang Lijun He Zhengsheng Han Yi Huang; Project supported by the National Natural Science Foundation of China(Grant No.61604027);the Basic and Advanced Technology Research Project of Chongqing Municipality,China(Grant No.cstc2016jcyj A1923);the Scientific and Technological Research Foundation of Chongqing Municipal Education Commission,China(Grant No.KJ1500404);the Youth Natural Science Foundation of Chongqing University of Posts and Telecommunications,China(Grant Nos.A2015-50 and A2015-52);the Chongqing Key Laboratory Improvement Plan,China(Chongqing Key Laboratory of Photo Electronic Information Sensing and Transmitting Technology)(Grant No.cstc2014pt-sy40001);the University Innovation Team Construction Plan Funding Project of Chongqing,China(Architecture and Core Technologies of Smart Medical System)(Grant No.CXTDG201602009); A reverse-conducting lateral insulated-gate bipolar transistor （NI.2-LltJlS｜） with a trench oxide layer （IUL）, teaturlng a vertical N-buffer and P-collector is proposed. Firstly, the TOL enhances both of the surf...; 关键词：reverse-conducting lateral insulated-gate bipolar transistor （RC-LIGBT） breakdown voltage snapback phenomenon

基于阳极弱反型层消除负阻效应的新型SOI LIGBT: 《微电子学》2017年第5期714-717,共4页周骏成建兵袁晴雯陈珊珊吴宇芳王勃; 国家自然科学基金资助项目(61274080); 在SOI衬底上,制作了一种基于阳极弱反型层消除负阻效应的新型横向绝缘栅双极晶体管(SOI AWIL-LIGBT)。利用反型所形成的高阻值电阻来使PN结阳极快速导通,阳极P+区中的空穴可以更快地注入漂移区,从而消除负阻效应。仿真结果表明,该新型LT...; 关键词：阳极短路横向绝缘栅双极晶体管击穿电压反型层负微分电阻效应

降低多输出通道功率芯片电磁辐射的设计: 《微电子学》2017年第1期10-13,共4页黄勇李阳周锌梁涛乔明张波; 国家核高基基金资助项目(2009ZX01033-001-012);国家自然科学基金资助项目(61376080); 介绍了一种可降低多通道输出功率芯片电磁辐射的设计方法。该功率芯片具有96个独立的输出通道,对芯片的高压总供电和单路输出通道的驱动模式进行研究。将实际测试的电磁辐射从原有的47dB·μV/m降低到36.8dB·μV/m,特别是在低于50MHz...; 关键词：LIGBT 功率芯片电磁辐射 CISPR标准多通道输出

Ultralow turnoff loss dual-gate SOI LIGBT with trench gate barrier and carrier stored layer被引量：1: 《Chinese Physics B》2016年第12期424-429,共6页何逸涛乔明张波; Project supported by the National Natural Science Foundation of China(Grant Nos.61376080 and 61674027);the Natural Science Foundation of Guangdong Province,China(Grant Nos.2014A030313736 and 2016A030311022); A novel ultralow turnoff loss dual-gate silicon-on-insulator （SOI） lateral insulated gate bipolar transistor （LIGBT） is proposed. The proposed SOI LIGBT features an extra trench gate inserted between the p-well an...; 关键词：lateral insulated gate bipolar transistor （LIGBT） turnoff loss trench gate barrier carrier storedlayer

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