降低多输出通道功率芯片电磁辐射的设计  

Design for Reducing Radiated EMI of Multi-Output Power IC

作　　者：黄勇[1,2] 李阳[1] 周锌[1] 梁涛[1,2] 乔明[1] 张波[1] 

机构地区：[1]电子科技大学微电子与固体电子学院,成都610054 [2]四川长虹电器股份有限公司,四川绵阳621000

出　　处：《微电子学》2017年第1期10-13,共4页Microelectronics

基　　金：国家核高基基金资助项目(2009ZX01033-001-012);国家自然科学基金资助项目(61376080)

摘　　要：介绍了一种可降低多通道输出功率芯片电磁辐射的设计方法。该功率芯片具有96个独立的输出通道,对芯片的高压总供电和单路输出通道的驱动模式进行研究。将实际测试的电磁辐射从原有的47dB·μV/m降低到36.8dB·μV/m,特别是在低于50MHz的低频区域内显著降低了电磁辐射的谐波分量,使得最终的准峰值(QPK)测试结果通过CISPR标准,并获得了3.2dB·μV/m的裕量。该方法可被广泛应用于其他类型的多通道输出功率芯片的电磁兼容整改工作中。An improved design for reducing radiated electromagnetic interference（EMI） was proposed and discussed. Both the total current and single output current mode were analyzed and verified in the power IC with 96 output channels. This method had reduced the tested result of radiated EMI from 47 dB·μV/mto 36.8 dB·μV/m, having suppressed the amplitude of EMI harmonics in the low frequency region under 50 MHz, which had made the final tested EMI QuasiPeak（QPK） result pass the CISPR standard and get enough margin of 3.2 dB·μV/m. This method could also be applied to other power integrated circuits with multi-outputs in the rectification work for reducing the radiated EMI.

关 键 词：LIGBT 功率芯片 电磁辐射 CISPR标准 多通道输出 

分 类 号：TN402[电子电信—微电子学与固体电子学]