基于阳极弱反型层消除负阻效应的新型SOI LIGBT  

A Novel Anode Weak Inversion Layer SOI LIGBT without NDR

作　　者：周骏[1] 成建兵[1] 袁晴雯 陈珊珊[1] 吴宇芳[1] 王勃[1] ZHOU Jun CHENG Jianbing YUAN Qingwen CHEN Shanshan WU Yufang WANG Bo(National Joint Engineer. Lab. for Radio Frequency Integration and Micro Assembly Technology, College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, P. R. China)

机构地区：[1]南京邮电大学电子科学与工程学院射频集成与微组装技术国家地方联合工程实验室,南京210003

出　　处：《微电子学》2017年第5期714-717,共4页Microelectronics

基　　金：国家自然科学基金资助项目(61274080)

摘　　要：在SOI衬底上,制作了一种基于阳极弱反型层消除负阻效应的新型横向绝缘栅双极晶体管(SOI AWIL-LIGBT)。利用反型所形成的高阻值电阻来使PN结阳极快速导通,阳极P+区中的空穴可以更快地注入漂移区,从而消除负阻效应。仿真结果表明,该新型LTGBT在保证关断速度不变的情况下,击穿电压为307V(漂移区长度为18μm)比,比常规SA-LIGBT提升了56%,并消除了负阻效应。A novel anode weak inversion layer lateral insulated-gate bipolar transistor（AWIL-LIGBT）structure on silicon-on-insulator（SOI）substrate was proposed and discussed.In order to suppress the negative differential resistance（NDR）effect which was the inherent drawback of the shorted anode LIGBT（SA-LIGBT）,the pinch resistance of the AWIL-LIGBT was increased by employing the highly resistive anode inversion layer as an electron conduction path.Compared with the conventional SA-LIGBT,the proposed LIGBT had a breakdown voltage of 307 V（Ln-drift=18μm）,which was increased by 56% at the same turn-off time,and the NDR effect was eliminated.

关 键 词：阳极短路横向绝缘栅双极晶体管 击穿电压 反型层 负微分电阻效应 

分 类 号：TN324.3[电子电信—物理电子学]