一种硅基新结构TG VDC SOI LIGBT  

A Silicon-Based Novel Structure TG VDC SOI LIGBT

作　　者：张海鹏[1] 何健[1] 白建玲 张强[1] 王颖 王彬[1] ZHANC Haipeng;HE Jian;BAI Jianling;ZHANC Qiang;WANG Ying;WANG Bin(School of Electronics and Infomlation,Hangzhou Dianzi University,Hangzhou 310018,China)

机构地区：[1]杭州电子科技大学电子信息学院,浙江杭州310018

出　　处：《电子科技》2018年第11期11-14,共4页Electronic Science and Technology

基　　金：国家自然科学基金(61774052)

摘　　要：针对传统的槽栅SOI LIGBT无法满足日益发展的智能功率集成电路对耐压性能和大电流处理能力需求的问题,文中提出了一种槽栅纵向双单元SOI LIGBT新结构。该结构在传统槽栅SOI LIGBT的漂移区引入了一个第二埋氧层,将器件隔离成上下两个并联的LIGBT单元,利用第二埋氧层的隔离增强器件的电流处理能力,并采用RESURF技术改善器件的正向阻断特性。Silvaco TCAD仿真结果表明,与常规TG SOI LIGBT相比,基于这种结构的通态电流提高了1. 2倍,击穿电压提高了1倍。In order to meet the increasing demand of high breakdown voltage and large on - state cunent of smart power integrated circuits, a novel Vertical Double Cells SOl LIGBT with Trench Gate on silicon - based SOl substrate was proposed. Within this structure, a second Buried Oxide Layer was introduced in the drift region to isolate the device into two parallel LIGBT cells. The isolation of the second Buried Oxide Layer increased the on - state current of the device while the use of RESURF technology enlarged its breakdown voltage. The Silvaco TCAD simulation results showed that the proposed structure - Vertical Double Cells SOI LIGBT with Trench Gate increased the on -state cunent by 1.2 times and the breakdown voltage by 1 time compared with the conventional TC SOI LICBT.

关 键 词：槽栅 双单元 智能功率集成电路 通态电流 击穿电压 

分 类 号：TN386[电子电信—物理电子学]