Reconfigurable dual-band low noise amplifier design and realization  

作　　者：唐旭升 黄风义 张有明 唐欣 

机构地区：[1]RF & OEIC Research Institute, National Mobile Communications Research Laboratory, Southeast University

出　　处：《Journal of Semiconductors》2014年第5期86-92,共7页半导体学报（英文版）

基　　金：supported by the National High Technology Research and Development Program of China(No.2009AA01Z261);the National Science and Technology Major Special Project(Nos.2009ZX03007-001,2012ZX03001-019)

摘　　要：A reconfigurable dual-band LNA is presented. The LNA employs switching capacitors and circuit in to realize the dual-band operation. These methodologies are used to design and implement a reconfigurable LNA for IMT-A and UWB application. The LNA is implemented using TSMC-0.13 μm CMOS technology. Measured performance shows an input matching of better than -13.5 dB, a voltage gain of 18-22.8 dB, with an NF of 4.3-4.7 dB in the band of 3.4-3.6 GHz, and an input matching of better than -9.7 dB, a voltage gain of 14.7-22.4 dB, and with an NF of 3.7-4.9 dB in the band of 4.2-4.8 GHz. According to the measure results, the proposed LNA achieves dual-band operation, and it proves the feasibility of the proposed topology.A reconfigurable dual-band LNA is presented. The LNA employs switching capacitors and circuit in to realize the dual-band operation. These methodologies are used to design and implement a reconfigurable LNA for IMT-A and UWB application. The LNA is implemented using TSMC-0.13 μm CMOS technology. Measured performance shows an input matching of better than -13.5 dB, a voltage gain of 18-22.8 dB, with an NF of 4.3-4.7 dB in the band of 3.4-3.6 GHz, and an input matching of better than -9.7 dB, a voltage gain of 14.7-22.4 dB, and with an NF of 3.7-4.9 dB in the band of 4.2-4.8 GHz. According to the measure results, the proposed LNA achieves dual-band operation, and it proves the feasibility of the proposed topology.

关 键 词：LNA RECONFIGURABLE DUAL-BAND IMT-A UWB CMOS 

分 类 号：TN722.3[电子电信—电路与系统] TP391[自动化与计算机技术—计算机应用技术]