CMOS超宽带低噪声放大器设计难点和要点分析  

The Analysis of Design Difficulties and Points of CMOS Ultra-Wideband Low Noise Amplifier

作　　者：石磊[1] 华梦琪 张惠国[3] 

机构地区：[1]上海交通大学微电子学院 [2]中国电子科技集团公司第五十八研究所 [3]常熟理工学院物理与电子工程学院

出　　处：《中国集成电路》2014年第5期45-52,共8页China lntegrated Circuit

基　　金："江苏省自然科学基金项目BK2011366"的支持

摘　　要：随着无线通信技术朝着多标准、宽频带的方向发展,为了满足无线通讯设备能够满足宽频带工作的要求,射频前端设计变得越来越困难。其中,作为无线射频接收机第一级的低噪声放大器关系到射频信号放大能力,特别是对整个系统的噪声和灵敏度有着决定性作用。因此,本文以0.8~2.5GHz超宽带LNA为例,分析了电路设计时会遇到的难点,并介绍了巴特沃斯匹配法、RC负反馈法和LC谐振法等内容。最后,通过采用ADS软件和TSMC 0.18um RF CMOS工艺库完成了电路的仿真,结果表明超宽带LNA完全满足设计要求。With the development of technology, the wireless system should adapt to more standard and wide-band conditions. Therefore, for meeting the wide-band operation demands,the design of RF front-end becomes more and more difficult. In the wireless receiver, the first stage is a low noise amplifier. Its character determines the amplification ability, the noise factor and the sensitivity of the system performance. So, taking the 0.8-2.5GHz Uhra-wideband LN A as an example, this paper analyzes the difficulties in designing the circuit, then introduces the Butterworth impedance matching method, RC negative feedback method and LC resonance method. Finally, a simulation has been completed -wideband with the ADS software and the TSMC 0.18um RF CMOS process library. The results show that the ultra LNA fully meets the design specifications.

关 键 词：UWB CMOS 超宽带 阻抗匹配 低噪声放大器 

分 类 号：TN722.3[电子电信—电路与系统]