双注入区量子点超辐射发光管的数值模拟  

Numerical Simulation of Quantum Dot Superluminescent Diodes with the Two-Section Structure

作　　者：陈红梅[1,2] 安琪[1,2] 吴艳华[1,2] 王飞飞[1,2] 胡发杰 李新坤[1,2] 金鹏[1,2] 吴巨[1,2] 王占国[1,2] 

机构地区：[1]中国科学院半导体研究所半导体材料科学重点实验室,北京100083 [2]中国科学院半导体研究所低维半导体材料与器件北京市重点实验室,北京100083

出　　处：《微纳电子技术》2014年第5期286-296,共11页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(61274072;60976057);国家高技术研究发展计划(863计划)资助项目(2013AA014201)

摘　　要：数值模拟了结构参数(超辐射区腔长和脊宽,光放大区腔长和张角)对双注入区量子点超辐射发光管器件性能(光谱和功率等)的影响。结果表明,当器件超辐射区注入电流和放大区注入电流均固定时,随着超辐射区腔长的增加,输出光谱中激发态强度减弱,基态强度先增强后减弱;随着放大区腔长的增加,输出光谱中基态强度增加,激发态强度先增加后减弱。超辐射区脊宽越大,逆向光波耦合到超辐射区的耦合系数越大,输出光强度越小。放大区张角越大,逆向光波耦合到超辐射区的耦合系数越小,输出光强度越小。为设计和优化该类型器件结构提供一定的依据。The effects of the structure parameters（cavity length and ridge width of the superluminescent section,cavity length and flare angle of the optical amplifier section）on the performances（spectra,power and so on）of the quantum-dot（QD）superluminescent diode（SLD） with the two-section structure were numerically simulated.The results show that when the injection currents of the superluminescent section and the optical amplifier section are fixed,with the increase of the cavity length for the superluminescent section,the intensity of the excited state（ES）decreases,and the intensity of the ground state（GS）increases firstly and then decreases in the output spectra.Furthermore,with the increase of the cavity length for the optical amplifier section,the intensity of the GS increases and the intensity of the ES increases firstly and then decreases in the output spectra.As the ridge width of the superluminescent section becomes larger,the feedback coupling coefficient will be larger and the output optical intensity will be lower. In addition,as the flare angel of the optical amplifier section becomes larger,the feedback coupling coefficient will be smaller and the output optical intensity will be lower.The research provides a certain basis for the design and optimization of such devices.

关 键 词：超辐射发光管(SLD) 量子点(QD) 双注入区结构 器件模型 结构参数 

分 类 号：TN36[电子电信—物理电子学] O471.1[理学—半导体物理]