绝缘栅双极型晶体管的研究进展  

Recent Development of Insulated Gate Bipolar Transistor

作　　者：张金平[1] 李泽宏[1] 任敏[1] 陈万军[1] 张波[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《中国电子科学研究院学报》2014年第2期111-119,共9页Journal of China Academy of Electronics and Information Technology

基　　金：国家科技重大专项(2011ZX02504-003);中央高校基本科研业务费项目(ZYGX2011J024)资助

摘　　要：作为一种新型的功率半导体器件,绝缘栅双极型晶体管(IGBT)以其优越的性能,成为中高功率电力电子领域的主流功率开关器件,被广泛应用于智能电网、新能源、高速铁路、工业控制、汽车电子、家电产品、消费电子等领域。概述了IGBT的演变历程以及主要技术发展,同时对我国IGBT的发展现状进行了分析。As a newly-developed power semiconductor device,insulated gate bipolar transistor（ IGBT） is becoming the mainstream power switch device in medium to high power applications due to its excellent performances. IGBT has been widely used in a variety of applications,such as smart grid,new energy, high-speed rail,industry control,automotive electronics,home appliances,consumer electronics,etc. The evolution of IGBT and its main technology development is described and the recent development of domestic IGBT industry is also analyzed.

关 键 词：功率半导体器件 绝缘栅双极型晶体管 研究进展 

分 类 号：TN32[电子电信—物理电子学]