硅通孔润湿性能影响因素的模拟仿真  

Simulation of Influencing Factors for Wetting through Silicon via

作　　者：王昭瑜[1,2] 岳恒[1,2] 王溯 王艳[1,2] 汪红[1,2] 丁桂甫[1,2] 赵小林[1,2] 

机构地区：[1]微米/纳米加工技术国家重点实验室,上海200240 [2]上海交通大学微纳科学技术研究院,上海200240 [3]上海新阳半导体材料股份有限公司,上海201616

出　　处：《复旦学报（自然科学版）》2014年第2期192-197,共6页Journal of Fudan University：Natural Science

基　　金：科技部重大专项基金资助项目(02专项:2011ZX02702);中国物理科学院超精密加工技术重点实验室开放基金资助(KF13001)

摘　　要：使用Fluent流场仿真软件模拟了电镀液对硅通孔(TSV)的浸润过程,讨论了TSV深宽比、电镀液流速、电镀液表面张力、接触角以及压强等因素对TSV浸润过程的影响.通过对比仿真寻找出能在电镀之前使电镀液完全浸润TSV所有表面的预润湿处理方法,以防止因润湿不彻底在TSV底部形成气泡而导致的有空洞电镀填充.通过仿真发现,电镀液表面张力越小,电镀液与待电镀样片表面的接触角越小,浸润过程中电镀液的流速越慢,浸润所处环境的压强越低,则越有利于电镀液对TSV的浸润;且流速为0.002 m/s时即可对深宽比低于或等于130μm:30μn的TSV实现完全浸润;浸润环境压强低于3 000 Pa时即可在流速为0.05 m/s时对深宽比为150μm:50μm的TSV基本实现完全浸润.当TSV结构的深宽比大于2的时候,没有经过预润湿而直接放入电镀液的TSV结构很难实现无空洞电镀填充.Based on Fluent software, the influencing factors including the aspect ratio of through silicon via （TSV）, velocity, surface tension and contact angle of the electrodeposition solution, and pressure during the wetting process were discussed through the simulation of electrodeposition solution wetting TSVo By means of a series of simulated experiments, the method of totally wetting all the surface of TSV before electrodeposition was founded. This can avoid forming voids inside TSV as a result of incomplete wetting. When the aspect ratio of TSV was larger than 2, the TSV structure without wetting before plating can hardly achieve void free filling. In addition, the TSV with aspect ratio of 130μm ：30 μm can be completely wet if the velocity of the solution was limited on 0. 002 m/s. Furthermore, when the velocity of solution was 0. 05 m/s, the TSV with aspect ratio of 150μm ： 50μm can be completely wet if the pressure was lower than 3 000 Pa.

关 键 词：硅通孔(TSV) Fluent流场仿真软件(Fluent) 预润湿 深宽比 流速 表面张力 接触角 

分 类 号：TQ153[化学工程—电化学工业]