电子束注入对多孔硅吸杂效果的影响  

Effect of electron beam injection on gettering effect of the porous silicon

作　　者：游小刚[1] 谭毅[1] 李佳艳[1] 石爽[1] 郭素霞[1] 

机构地区：[1]大连理工大学材料科学与工程学院,辽宁大连116024

出　　处：《功能材料》2014年第8期8129-8133,共5页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(51074032);国家自然科学基金-云南联合基金资助项目(U1137601);国家自然科学青年基金资助项目(51104028);高等学校博士学科点专项科研基金资助项目(新教师类)(20110041120031)

摘　　要：研究了电子束注入对多孔硅吸杂效果的影响。采用电化学腐蚀方法利用双电解槽在单晶硅片上制备多孔硅。电子束注入以后多孔硅的微观形貌发生了变化,通过3min的电子束注入处理,硅片的电阻率发生了明显的改变,大于相同条件下经过快速热处理的硅片的电阻率,这充分证明了电子束注入有热效应与电场效应的双重作用,对去除杂质B有一定的效果。电子束注入时间对去除杂质的效果有一定的影响。Study on the effect of porous silicon gettering by electron beam injection was conducted.Preparation of porous silicon was carried out by electrochemical etching in both electrobath.The morphology of porous silicon changed after electron beam injection.Through 3min gettering treatment,the resistivity changed significantly and greater than the resistivity of the silicon wafers from rapid heat treatment under the same condition, which fully improves that electron beam injection play a dual role of thermal effects and electrical effects,and electron beam injection have a certain effect on the removal of impurities.The time of the electron beam injection shows certain effect on the removal effectiveness of boron.

关 键 词：多孔硅 电子束注入 吸杂 电阻率 

分 类 号：TG1[金属学及工艺—金属学]