VHF频段宽带大功率LDMOS功放电路的设计与实现  

Design and Realization of Broadband and High Power LDMOS Amplifier at VHF Band

作　　者：夏达[1] 孙卫忠[1] 

机构地区：[1]南京电子技术研究所,南京210039

出　　处：《现代雷达》2014年第5期88-91,共4页Modern Radar

摘　　要：介绍了一种VHF频段宽带大功率LDMOS功放的设计方法,使用ADS仿真软件对其大信号模型的阻抗参数进行了提取,通过宽带巴伦匹配技术实现了匹配电路的设计。利用谐波平衡法对功放电路的增益和效率指标进行仿真,并与实物测试数据对比,验证了设计方法的可行性。该功放电路在VHF频段100%相对带宽内,实现输出功率大于1 000 W,效率高于70%,带内波动优于1 dB的指标。文中为VHF频段宽带大功率LDMOS功放电路的设计提供了一种可行的设计方法,可应用于同类型功放电路的设计中,具有广阔的工程应用前景。A method of designing broadband and high power LDMOS amplifier at VHF band was introduced, using ADS simulation software to extract the impedance parameters of its large signal model, and realizing the design of matching circuit by broadband Bal- un matching technique. Then the harmonic balance method was used to simulate gain and efficiency of amplifier circuit and test data was compared with practicality. The amplifier module generated output power higher than 1 000 W, efficiency more than 70 %, in band ripple better than 1 dB from 100 % relative bandwidth at VHF band. The paper provided a feasible design method of broadband and high power LDMOS amplifier at VHF band, which can be applied to the amplifier design of the same type, with good prospect in engineering application.

关 键 词：甚高频 横向扩散金属氧化物半导体 宽带巴伦 自动相关监测 

分 类 号：TN722.75[电子电信—电路与系统]