Mg含量对N掺杂MgZnO薄膜的光电性能和N掺杂行为的影响  

Effects of Mg contents on photoelectric properties and N doped behaviors in N doped MgZnO fims

作　　者：高丽丽[1,2] 徐莹[2] 张淼[1] 姚斌[2] 

机构地区：[1]北华大学物理学院,吉林吉林132013 [2]吉林大学物理学院,吉林长春130012

出　　处：《光学精密工程》2014年第5期1198-1203,共6页Optics and Precision Engineering

基　　金：国家自然科学基金资助项目(No.11274135);吉林省教育厅"十二五"科学技术研究项目(No.2013189)

摘　　要：利用射频磁控溅射技术,在相同流量的氮气、氩气混合气体条件下,在石英基片上溅射获得了不同Mg含量的N掺杂MgxZn1-xO薄膜,并研究了Mg含量对N的掺杂行为和薄膜光电性能的影响。结果显示,在N掺杂MgxZn1-xO薄膜中,随着Mg含量的增加,薄膜的电阻率增加,载流子浓度下降;X射线电子能谱中位于395eV左右的N1s峰强逐渐减弱、甚至消失;Raman光谱中与受主NO相关的位于272cm-1、642cm-1左右的振动峰也随之减弱、消失。得到的结果表明:在N和O的化学势相同的条件下,薄膜中Mg含量对N的掺杂行为有一定的影响,随着Mg含量的增加,受主NO的掺杂浓度降低,N的掺杂状态发生变化;N掺杂MgxZn1-xO薄膜中Mg含量低时,存在NO与(N2)O两种状态;Mg含量高时,薄膜中只存在(N2)O一种形式。N doped MgZnO films with different Mg contents were prepared on quartz substrates using mixed gases of 99.99% pure nitrogen and argon at the same flow by radio frequency magnetron sputtering technique,respectively.The effects of Mg content on the doping behavior of N and photoelectric properties of these films were studied.The experimental results indicate that the resistivity increases and the carrier concentration decreases for the films as the Mg content increases.In the X-ray Photoelectron Spectroscopy（XPS）,the N1speak located near 395eV is gradually weakened and even disappeared.In the Raman spectra,the peaks of the N for O site（NO）at 272and 642cm-1 are also weakened and disappeared with the Mg content increasing.It can be concluded that the doping behavior of N is dominated by the Mg content when N and O are at the same chemical potential in the experiment.With the Mg content increasing,the doping concentration of N for O site（NO）decreases andthe chemical state of N is changed.In the film with a low Mg content,N for O site（NO）and N2for O site（N2）Oare coexist,but in the film with a high Mg content,only（N2）Oexists.

关 键 词：MgZnO薄膜 N掺杂 掺杂浓度 光电性能 

分 类 号：O472[理学—半导体物理]