单根ZnO纳米线的光敏及场效应管性质研究  

The Photoresponse Characteristics and Field-effect Transistor Properties of Individual ZnO Nanowire

作　　者：唐欣月[1] 张锷[1] 高红[1] 

机构地区：[1]哈尔滨师范大学

出　　处：《哈尔滨师范大学自然科学学报》2014年第3期66-68,84,共4页Natural Science Journal of Harbin Normal University

基　　金：黑龙江省教育厅科学技术研究重点项目(12521z012)

摘　　要：采用化学气相沉积法合成了ZnO纳米线,并对其进行了扫描电镜以及光致发光表征.基于ZnO纳米线,采用微栅模板法制备了光电器件及背栅场效应晶体管.利用半导体参数测试仪测量了ZnO纳米线的I-V特性、光响应特征及场效应管的输出特性等.实验表明,ZnO纳米线具有良好的紫外光敏感度,预示了良好的光电探测应用前景及FET的应用可能性.ZnO nanowires were synthesized by chemical vapor deposition （CVD） method, and were characterized by scanning electron microscopy （SEM） , and Raman systems. The individual ZnO nanowire photoresponse devices and field - effect transistors were fabricated by micro - grid template method. The I - V curves, photoresponse characteristics, and the output properties have also been measured. It can be concluded that the sensitivity of ZnO nanowire is excellent under UV illumination. In addition, the measurement results suggest a possibility for ZnO nanowire field -effect transistors.

关 键 词：ZNO 纳米线 光响应 场效应管 

分 类 号：TN386[电子电信—物理电子学]