Buffer单元单粒子效应及其若干影响因素研究  

A Research in the Buffer CELL Single Event Effects and Some of Its Influencing Factors

作　　者：杜明 邹黎 李晓辉 邱恒功 邓玉良 

机构地区：[1]深圳市国微电子有限公司,广东深圳518057

出　　处：《电子器件》2014年第2期186-189,共4页Chinese Journal of Electron Devices

摘　　要：基于标准0.13μm工艺使用Sentaurus TCAD软件采用3D器件/电路混合模拟方式仿真了buffer单元的单粒子瞬态脉冲。通过改变重离子的入射条件,得到了一系列单粒子瞬态电流脉冲(SET)。分析了LET值、入射位置、电压偏置等重要因素对SET峰值和脉宽的影响。研究发现,混合模式仿真中的上拉补偿管将导致实际电路中SET脉冲的形状发生明显的变化。Based on standard 0. 13 μm technology mixed-mode simulations of heavy ion is introduced. The Single Event Transient（ SET） on buffer cells is simulated by using device and circuit mixed mode of heavy ion. By changing the simulation conditions,a series of SET current pulse is obtained. On the analysis of the influence of several important factors,such as the linear energy transfer（ LET）,the incidence location and voltage bias on the SET pulse width and magnitude are executed. The results indicate the pull-up compensating MOSFETin practical circuit obviously to lead to a different SET pulse.

关 键 词：BUFFER 电荷收集 单粒子瞬态脉冲 TCAD仿真 

分 类 号：TN432[电子电信—微电子学与固体电子学]