2.4 GHz SiGe HBT E类高功率放大器  

2. 4 GHz SiGe HBT Class E High Power Amplifier

作　　者：尤云霞[1] 陈岚[1] 王海永[1] 吴玉平[1] 吕志强[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《电子器件》2014年第2期235-239,共5页Chinese Journal of Electron Devices

基　　金：国家科技重大专项课题项目(2009ZX02303-04)

摘　　要：针对无线通信飞速发展对高功率和高效率功率放大器的需求,提出了一种Cascode结构的2.4 GHz E类高功率放大器。它采用单端接地和单级放大的电路形式。基于国内新研制的0.18μm SiGe BiCMOS工艺,实现了片内全集成,包括输入与输出匹配网络,具有结构简单、高集成度等特点。同时,考虑了器件的击穿电压,高电流下的电迁移和高功率的稳定性等问题,并进行了优化设计。结果表明,在10 V电源电压时,放大器的输出功率高达30 dBm,效率PAE为39.69%,最大功率增益达14 dB。For the needs of high power and high efficiency power amplifier in the rapid development of wireless communication,a 2. 4GHz class E high power amplifier was designed,which was based on Cascode configuration. It employed single-ended and one stage amplification circuit format. All the devices including input and output matching networks were integrated on chip which was based on a 0. 18 μm SiGe BiCMOS technology newly researched in a domestic foundry. It had advantages of simple structures and high integration. At the same time,it also considered devices＇ breakdown voltage,electro migration with high current and stability of high power and so on problems to design optimization. Results showed that the power amplifier＇s output power could reach up to 30 dBm,PAE to 39. 69% and maximum power gain was 14 dB of power supply 10 V.

关 键 词：功率放大器 E类 Cascode结构 功率器件 

分 类 号：TN432[电子电信—微电子学与固体电子学]