特高压晶闸管掺杂技术研究  

On Extra-high Voltage Thyristor Doping Technology

作　　者：高山城[1] 罗艳红[1] 张琦[1] 吴飞鸟 高飞[1] 

机构地区：[1]西安电力电子技术研究所,西安710061

出　　处：《价值工程》2014年第17期47-48,共2页Value Engineering

基　　金：科技部技术开发专项研究课题:特高压晶闸管高寿命;高均匀性掺杂技术研究(2008EG119124)

摘　　要：特高压晶闸管半导体芯片主要通过掺杂技术形成。高均匀性、高寿命掺杂技术是获得高品质特高压晶闸管的根本保证。本文通过一系列大胆的创新方法和先进"6σ设计[1]"的控制措施,成功研制了世界上首只6英寸4000A/8000V特高压晶闸管,并成功应用于"向家坝-上海±800KV/6400MW"特高压直流输电示范工程中。Extra-high voltage thyristor semiconductor chip is mainly formed by doping techniques. High uniformity and high life expectancy doping technology is the fundamental guarantee to obtain high-quality ultra-high voltage thyristor. Through a series of bold innovative methods and advanced＆quot;6σdesign＆quot;control measures, this paper successfully developed the world＇s first six inches 4000A/8000V extra-high voltage thyristors, and successfully applied into ＆quot;Xiangjiaba-Shanghai ± 800KV/6400MW＆quot; extra-high voltage direct-current transmission demonstration project.

关 键 词：晶闸管 掺杂技术 特高压直流输电 6σ设计 

分 类 号：TN34[电子电信—物理电子学]