Efficiency Improvement of 590 nm AIGalnP Light Emitting Diode with a Reflective Top Electrode  

作　　者：Hyung Joo Lee Young Dae Cho Young Jin Kim Choong Hun Lee Jae Hoon Kim Hwa Sub Oh Su Chang Ahn 

机构地区：[1]CF Technology Division, AUK Corporation, lksan 570-210, Republic of Korea [2]Division of Microelectronics and Display Technology, Wonkwang University, Iksan 570-749, Republic of Korea [3]LED Team, Korean Photonic Technology Institute (KOPTI), Gwangfu 500-779, Republic of Korea

出　　处：《Journal of Physical Science and Application》2014年第2期115-118,共4页物理科学与应用（英文版）

摘　　要：In this work, enhancement of the light extraction efficiency of a 590 nm AIGaInP light-emitting diodes （LED） with a reflective top electrode （RTE） was investigated. A distributed Bragg reflector （DBR）, consisting of AIAs/AIGaAs pairs, grown on an AlGaInP structure was used as a reflector for a reflective top electrode. It was found that a higher output power was observed from the AIGalnP LED with a RTE than from a conventional one. In addition, it was noted that the improvement in the output power depends strongly on the reflectivity of the reflector and that it exhibits a more effective performance with low injection currents. The increase in the optical output power was attributed to the enhanced extraction efficiency caused by a reduction of light absorbed from the emission region to top electrode through the RTE.

关 键 词：ALGAINP reflective top electrode （RTE） light-emitting diode （LED） 

分 类 号：TN312.8[电子电信—物理电子学] TM534.1[电气工程—电器]