LEC法生长富磷掺铁InP单晶晶格应变与残留应力研究  

Investigation on Lattice Strain and Residual Stress in P-rich Fe Doped InP Crystal Grown by LEC Method

作　　者：陈爱华[1] 杨瑞霞[1] 杨帆[1] 刘志国[1] 孙聂枫[2] 

机构地区：[1]河北工业大学信息工程学院,天津300401 [2]中国电子科技集团公司第十三研究所专用集成电路国家重点实验室,石家庄050051

出　　处：《人工晶体学报》2014年第4期743-747,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(61076004);高等学校博士学科点专项科研基金(20101317110001)

摘　　要：运用原位磷注入合成法在高压单晶炉内合成富磷的InP熔体,并利用液封直拉法(LEC)生长出了3英寸富磷掺Fe的InP单晶。运用高分辨率X射线衍射技术、偏振差分透射谱测试技术、光致荧光谱技术对富磷掺Fe的InP晶片进行了结构、应力及发光特性测试。结果表明,晶格的应变导致了PL发光峰峰位的变化,晶格应变与残留应力测试结果相一致,说明材料生长过程中的热应力是导致样品晶格常数分布不均匀的主要因素。3-inch diameter P riched Fe-doped InP single crystal was grown by in-situ phosphorous injection synthesis liquid encapsulated Czochraski（LEC） method. The structure and luminescence properties of the wafer samples were characterized by high-resolution X-ray diffraction,transmitted differential spectrosopy and photoluminescence mapping method. The results indicate that crystal strain result in the photoluminescence peak wavelength shift,accompany with the results of residual stress, indicate that the thermal stress during the crystal growth process is the main factor inducing the inhomogeneous distribution of the lattice constant.

关 键 词：磷化铟 液封直拉法 晶格应变 残留应力 

分 类 号：TN304.2[电子电信—物理电子学]