电子束蒸发制备HfO_2薄膜的性能研究  

Study on Performance of HfO_2 Thin Film Prepared by the Electron Beam Evaporation Method

作　　者：张红鹰[1] 吴师岗[1] 杜健[2] 

机构地区：[1]山东理工大学化学工程学院,淄博255049 [2]滨州市公路管理局,滨州256600

出　　处：《硅酸盐通报》2014年第5期1256-1258,1263,共4页Bulletin of the Chinese Ceramic Society

基　　金：国家自然科学基金资助(11104166)

摘　　要：用电子束蒸发方法沉积HfO2薄膜,用X射线衍射和透射光谱测定HfO2薄膜的结构特征和光学性能,并测定薄膜的弱吸收和损伤阈值。结果表明:HfO2薄膜在沉积温度为350℃时,达到了较好的结晶程度。在可见光和近红外光区具有很高的透过率;HfO2薄膜的损伤阈值比较高,达到10.5 J/cm2。HfO2 thin films were prepared properties of thin films were measured by weak absorption and laser induced damage by electron-beam evaporation method, structural and optical X-ray diffraction spectra and transmission spectra; Morever, threshold （LIDT） were measured. These results showed that HfO2 thin films have a better crystallinity with the 350 ℃ deposition temperature; HfO2 thin films have high transmittance in the visible and near infrared region ; LIDT of HfO2 thin films reach 10.5 J/cm2.

关 键 词：HFO2薄膜 X射线衍射 透射光谱 薄膜结构 光学性能 

分 类 号：O484[理学—固体物理]