近空间升华法制备CdZnTe外延厚膜及其性能研究  

Growthand characterization of thick epitaxial CdZnTe film by close space sublimation

作　　者：蔺云[1] 介万奇[1] 查钢强[1] 张昊[1] 周岩[1] 汤三奇[1] 李嘉伟[1] 

机构地区：[1]西北工业大学凝固技术国家重点实验室,西安710072

出　　处：《功能材料》2014年第10期72-75,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(51202197);国家重点基础研究专项基金资助项目(2011CB610406)

摘　　要：采用近空间升华法在GaAs(100)衬底上外延生长CdZnTe单晶厚膜,用化学腐蚀的方法去除掉GaAs(100)衬底后,对CdZnTe外延膜上、下表面的形貌、成分、结构以及电学性能进行了表征分析。SEM和EDS的结果表明,CdZnTe外延膜表面平滑致密且膜中成分分布较均匀;红外透过成像分析的结果表明,CdZnTe厚膜中无明显的Te夹杂相;X射线摇摆曲线、PL谱的结果表明,随着薄膜厚度的增加,CdZnTe外延膜中的晶体缺陷减少,应变弛豫,结晶质量提高,通过增加膜厚可以获得高质量的CdZnTe外延膜;电学测试表明,CZT外延膜的电阻率在1010Ω·cm数量级,且具有较好的光电响应特性,可用于高能射线探测。The close space sublimation method was used for the epitaxial growth of thick CdZnTe single crystal films for high-energy radiation detectors.High quality CdZnTe epilayers had been successfully grown on a GaAs（100）substrate by CSS method.Crystalline quality of the upper and lower surfaces of the epilayer was as-sessed from X-ray rocking curve measurements and photoluminescence（PL）spectra after GaAs（100）substrate had been removed by Chemical etching.The density of defects in the epilayer decreases with increasing the thickness,which suggests that the high-quality epilayer can be obtained by increasing the thickness.No Te in-clusions in the CdZnTe films grown on GaAs（100）were observed with IR transmission imaging.The film resis-tivity was in the order of 10^10 Ω·cm,which shows a good photoelectric property.

关 键 词：近空间升华法 CdZnTe外延厚膜 PL谱 应变弛豫 

分 类 号：TB34[一般工业技术—材料科学与工程]