氧分压对溅射氧化钒薄膜结构和透光性能的影响  

Influence of Oxygen Partial Pressure on Structure and Optical Transmittance of Sputtered Vanadium Oxide Films

作　　者：唐晓红[1] 黄美东[1] 杜姗[1] 刘春伟[1] 高倩[1] 王小龙[1] 张建鹏[1] 杨明敏[1] 

机构地区：[1]天津师范大学物理与材料科学学院,天津300387

出　　处：《激光与光电子学进展》2014年第6期194-199,共6页Laser & Optoelectronics Progress

基　　金：国家自然科学基金(61078059)

摘　　要：采用射频磁控溅射法,在K9抛光玻璃基底上沉积氧化钒(VOx)薄膜,研究在其他参数保持不变时氧分压参量对薄膜的结构、表面质量及透光性能的影响。利用表面轮廓仪、X射线衍射仪、原子力显微镜及分光光度计分别对样品的沉积速率、物相结构、表面形貌和紫外-近红外光透射率进行分析。结果表明,制备的VOx薄膜的晶相随氧分压不同发生改变,调整氧分压在可见-近红外光区域可获得弱吸收的光学膜,但氧分压过高只能获得低的薄膜沉积速率,氧分压对薄膜表面粗糙度及晶体生长模式也有不同程度的影响。本文对实验结果进行了分析和讨论。VOx thin films are deposited on K9 polished glass substrate by RF magnetron sputtering at various oxygen partial pressures. The surface profiler is used to measure the thickness and deposition rate, and the X ray diffraction is employed to detect the crystalline structure of the films. Surface morphology of the films is observed by afomic force microscopy （AFM）. Transmittance spectra of the films are measured by the spectroscopy in the range from ultraviolet to near infrared. It is indicated that the VOx thin films take on crystalline state with different phases, and adjusting oxygen partial pressures can get optical films with weak absorption from visible to near infrared region, but high oxygen partial pressures go against with deposition rate of the films. Oxygen partial pressures have the influence of different degrees on the surface roughness and crystal growth pattern of the films.

关 键 词：薄膜 氧化钒 射频磁控溅射 氧分压 

分 类 号：O484[理学—固体物理]