Investigation on surface roughness in chemical mechanical polishing of TiO_2 thin film  

作　　者：段波 周建伟 刘玉岭 王辰伟 张玉峰 

机构地区：[1]Institute of Microelectronics,Hebei University of Technology

出　　处：《Journal of Semiconductors》2014年第6期10-13,共4页半导体学报（英文版）

基　　金：Project supported by the Natural Science Foundation of Hebei Province(No.E2013202247);the Science and Technology Plan Project of Hebei Province(Nos.Z2010112,10213936);the Hebei Provincal Department of Education Fund(No.2011128)

摘　　要：Abstract： Surface roughness by peaks and depressions on the surface of titanium dioxide （TiO2） thin film, which was widely used for an antireflection coating of optical systems, caused the extinction coefficient increase and affected the properties of optical system. Chemical mechanical polishing （CMP） is a very important method for surface smoothing. In this polishing experiment, we used self-formulated weakly alkaline slurry. Other process parameters were working pressure, slurry flow rate, head speed, and platen speed. In order to get the best surface roughness （1.16 A, the scanned area was 10 × 10 μm2） and a higher polishing rate （60.8 nm/min）, the optimal parameters were： pressure, 1 psi; slurry flow rate, 250 mL/min; polishing head speed, 80 rpm; platen speed, 87 rpm.Abstract： Surface roughness by peaks and depressions on the surface of titanium dioxide （TiO2） thin film, which was widely used for an antireflection coating of optical systems, caused the extinction coefficient increase and affected the properties of optical system. Chemical mechanical polishing （CMP） is a very important method for surface smoothing. In this polishing experiment, we used self-formulated weakly alkaline slurry. Other process parameters were working pressure, slurry flow rate, head speed, and platen speed. In order to get the best surface roughness （1.16 A, the scanned area was 10 × 10 μm2） and a higher polishing rate （60.8 nm/min）, the optimal parameters were： pressure, 1 psi; slurry flow rate, 250 mL/min; polishing head speed, 80 rpm; platen speed, 87 rpm.

关 键 词：TiO2 thin film surface roughness CMP process parameters 

分 类 号：TN305.2[电子电信—物理电子学]