Cu/Hg_3In_2Te_6欧姆接触形成机制的研究  

Study on Formation Mechanism of Cu/Hg_3In_2Te_6 Ohmic Contact

作　　者：刘文波[1] 傅莉[1] 李亚鹏[1] 王晓珍[1] 

机构地区：[1]西北工业大学材料学院凝固技术国家重点实验室,西安710072

出　　处：《人工晶体学报》2014年第5期1086-1091,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金(51172185);西北工业大学研究生创业种子基金(Z2013016)

摘　　要：采用电流-电压特性测试和X射线光电子能谱测试对Cu/Hg3In2Te6接触特性及其形成机制进行了研究。研究发现,当所加电压不超过10 V时,Cu/Hg3In2Te6接触的电流-电压特性曲线均呈现出良好的线性关系,表现为欧姆接触特性。经拟合,在1 V、3 V、5 V和10 V电压下的Cu/Hg3In2Te6接触的欧姆特性系数分别为0.99995、0.99981、0.99968和0.99950。当电压增加至12 V及以上时,由于Cu/Hg3In2Te6接触势垒被击穿,导致Cu/Hg3In2Te6欧姆接触被破坏。通过X射线光电子能谱深度剖析,发现界面处的元素存在显著的扩散现象,因而导致界面元素的化学环境发生改变,引起了界面上各元素的结合能发生偏移,其中Cu 2p结合能向高能方向偏移0.15 eV,而Te3d结合能向低能方向偏移0.15 eV。研究表明界面元素互扩散是促进Cu/Hg3In2Te6欧姆接触形成的主要原因。The formation mechanism for Cu/Hg3In2Te6 ohmic contactln were invertigated by current- voltage characteristic test and X-ray photoemission spectroscopy. The result shows that the current-voltage characteristics of Cu/Hg3In2Te6 contact appeared well linear as the voltage was under 10 V. Through the electric characteristic curve fitted, the ohmic coefficients were obtained about 0. 99995, 0. 99981, 0. 99968 and 0.99950 corresponding to 1 V, 3 V, 5 V and 10 V, respectively. The Ohmic contact between CufHg3In2Te6 was destroyed as the voltage exerted on the Cu/Hg3In2Te6 contact was added to 12 V and above, which results in that the Cu/Hg3InzTe6 contact barrier was brokendown. Through XPS depth profile, the interface elements diffusion was discovered leading to that the chemical environment of elements varied in the Cu/Hg3In2Te6 interface and thus the interface elements binding energy shifted. In addition, the binding energy of Cu 2p increased with a degree of 0.15 eV while the Te 3d decreased 0. 15 eV. Therefore the interdiffusion of interface elements was the main reason that contributed to the formation of Cu/Hg3In2Te6 Ohmic contact.

关 键 词：Hg3In2Te6 欧姆接触 X射线光电子能谱 界面扩散 

分 类 号：TN304[电子电信—物理电子学]