光控晶闸管的集成BOD转折电压  

Break-Over Voltage of a BOD Integrated in the Light Triggered Thyristor

作　　者：高山城[1] 罗艳红[1] 吴飞鸟 李玉玲[1] 高飞[1] 

机构地区：[1]西安电力电子技术研究所,西安710061

出　　处：《半导体技术》2014年第6期414-418,共5页Semiconductor Technology

摘　　要：介绍了新型光控晶闸管,其集成了一个非常重要的电气功能,即正向过压保护功能。通过在光控晶闸管光敏区内集成转折二极管(BOD),实现光控晶闸管正向保护功能。如果集成BOD转折电压太高,不能有效保护晶闸管;若转折电压太低,则达不到光控晶闸管设计的阻断电压要求。通过计算机仿真技术和工艺实验方法,成功地揭示了光控晶闸管集成BOD转折电压与硅材料电阻率、pn结结构尺寸和温度的关系,从而精确设计了光控晶闸管集成BOD转折电压,研制了5英寸(1英寸=2.54 cm)3 125 A/7 600 V特高压光控晶闸管,并成功应用于"云南-广东±800 kV/5 000 MW"特高压直流输电工程中。The new type of the light-triggered thyristor which integrates a very important electricalfunction-positive over-voltage protection was introduced. By integrating the break-over diode （BOD） inthe light-triggered thyristor＇s sensitive region,it can achieve the positive over-voltage protection of light-triggered thyristor. If the break-over voltage of the integrated diode is too high, it can not protect the thy-ristor effectively; too low, can not satisfy the blocking voltage design requirements of the light-triggeredthyristor. By using the computer simulation technology and process experimental methods, the relation-ship between the break-over voltage and resistivity of silicon material, size and structure of the pn junc-tion and temperature were revealed, and the break-over voltage of light-triggered thyristor was designedaccurately. A 5-inch 3 125 A/7 600 V ultra high voltage （UHV） light-triggered thyristor was deve-loped, and successfullyused in the Yunnan-Guangdong ± 800 kV/5 000 MW ultra high voltage directcurrent （UHVDC） project.

关 键 词：光控晶闸管(LTT) 光敏区 转折二极管(BOD) 正向保护 转折电压 特高压直流输电(UHVDC) 

分 类 号：TN34[电子电信—物理电子学]