大功率900nm超大光腔三叠层隧道级联激光器  

High-Power 900 nm Triple Stacks Tunnel Cascade Lasers with a Super-Large Optical Cavity

作　　者：车相辉[1] 宁吉丰[1] 张宇[1] 赵润[1] 任永学[1] 陈宏泰[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2014年第6期423-427,共5页Semiconductor Technology

摘　　要：研制了一款大功率900 nm超大光腔三叠层隧道级联激光器。针对高功率900 nm隧道级联激光器存在的光学灾变损伤(COD)和工作电压高等问题,通过Lastip软件和波导模拟软件,设计并优化了900 nm超大光腔三叠层隧道级联激光器的材料结构。对比扩展波导激光器结构的性能,超大光腔结构提高了三叠层隧道级联激光器输出光功率,降低了工作电压。采用金属有机化学气相淀积(MOCVD)方法生长了900 nm三叠层隧道级联激光器材料,并制作成条宽200μm、腔长800μm的激光器芯片,采用金属管壳封装制成激光器单管。测试结果表明,室温下,在频率10 kHz、脉宽100 ns、工作电流30 A时,器件输出功率约85 W,室温条件下器件老化595 h,输出功率基本不降低。A high-power 900 nm triple stacks tunnel cascade laser with a super-large optical cavitywas fabricated. Based on the problems of the catastrophic optical damage （COD） and a high operatingvoltage for high-power 900 nm tunnel cascade lasers, the material structure of 900 nm triple stacks tunnelcascade laser with a super-large optical cavity was designed and optimized by the Lastip and waveguidesimulation software. Compared with the performance of the expanding waveguide laser structure, the su-per-larger optical cavity structure improves the output power of triple stacks tunnel cascade lasers and re-duces the operating voltage. The 900 nm triple stacks tunnel cascade laser material was grown by metalorganic chemical vapor deposition （MOCVD） process. The laser chip with the strip width of 200 txm andthe cavity length of 800 txm was fabricated, and the single-pipe laser was fabricated with the metalpackage. The test results show that the output power reaches to 85 W at the 30 A operating current withthe pulse width of 100 ns and frequency of 10 kHz at room temperature, and after aging 595 hours atroom temperature, the output power of the device doesn＇t reduce.

关 键 词：超大光腔 大功率 900nm 半导体激光器 金属有机化学气相沉积(MOCVD) 隧道结 

分 类 号：TN248.4[电子电信—物理电子学]