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机构地区:[1]贵州大学贵州省微纳电子与软件重点实验室,贵州贵阳550025
出 处:《现代电子技术》2014年第7期133-135,138,共4页Modern Electronics Technique
基 金:贵州省科技计划项目(黔科合SY字[2013]3015号);贵州省农业攻关项目(黔科合NY字[2011]3107)
摘 要:提出了基于TSMC 0.18μm RF CMOS工艺带温度补偿高精度振荡器的设计方案。针对射频电子标签应用的设计要求,选用改进型的双电容张弛振荡器结构。通过温度补偿作用,参考电压与输出电流受电源影响较小,保证了振荡器输出频率的稳定性。使用SPECTRE工具对电路进行仿真,在1.8 V电源电压下,-25~100℃范围内,中心频率为1.92 MHz时最大偏差小于±0.75%,达到使用的要求,并在此基础上完成电路的版图。Based on TSMC′s 0.18 μm RF CMOS process,a desidn scheme of high-accuracy oscillator with temperature compensation is presented. A structure of the improved double-capacitor relaxation oscillator was chosen to meet the design re-quirements of the RFID tags. In order to guarantee the stability of the oscillator output frequency,the temperature compensation technology was adopted in the oscillator to minimize the effect of power surply on reference voltage and output current. The SPECTRE tool was used for circuit simulation. The result indicates that the maximum frequency deviation is less than ±0.75% at 1.92 MHz center frequency when the circuit works at 1.8 V and the temperature range is -25~100 ℃. It meets the application re-quirement. On the basis of the simulation,the layout diagram was accomplished.
分 类 号:TN710-34[电子电信—电路与系统]
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