n-ZnO/p-GaN异质结紫外探测器及其光电性能研究  

Photoelectric properties of n-ZnO/p-GaN heterojunction UV photodetector

作　　者：黄瑞志[1] 曲崇[1] 李清山[1] 张立春[1] 张忠俊[1] 张敏[1] 赵风周[1] 

机构地区：[1]鲁东大学物理与光电工程学院,山东烟台264025

出　　处：《光电子．激光》2014年第6期1058-1062,共5页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金(11144010);山东省自然科学基金(ZR2010AL026)资助项目

摘　　要：利用脉冲激光沉积(PLD)方法在p-GaN衬底上沉积了n-ZnO薄膜,构造了n-ZnO/p-GaN异质结型紫外(UV)光-电探测器原型器件,在(UV)光照条件下测试了器件的光电性能。扫描电镜(SEM)和X射线衍射(XRD)测试结果表明,ZnO薄膜具有很好的结晶质量;I-V曲线显示,器件在黑暗和光照环境下都表现出明显的整流行为;光谱响应曲线表明,器件响应度峰值出现在364nm附近,当反向电压为-5V时光电流达到饱和,此时响应度峰值达到1.19A/W。不同反向工作电压下的光谱探测率曲线表明,器件对364nm附近的UV光有较强的选择性,在-2V偏压下具有最佳的探测率,其探测率峰值达到8.9×1010 cm·Hz1/2/W。High quality ZnO films were deposited on p-GaN by pulsed laser deposition method to form a pn heterojunction UV photodetector and they were tested under UV illumination.scan electro microscopy（SEM）and X-ray diffraction（XRD）results show the good crystal quality of ZnO films.The I-V characteristic curves of the n-ZnO/p-GaN heterojunction UV photodetector indicate obvious rectifying behaviour both in the dark and under illumination.The spectral responsivity curves under several reverse voltages show the spectral responsivity peak is located at 3 6 4nm.When the reverse voltage reaches-5V,the photocurrent of the detector saturates and the peak responsivity reaches 1.19A/W.The detectivity curves under various reverse voltages show that the detector has a high selectivity for UV light around 364nm,and the optimal detectivity reaches 8.9×10^10 cm·Hz1/2/W at-2Vreverse bias.At-2Vbias,the current of the detector under 365nm UV light is about 183times of that in the dark.Continuous measurements indicate the reproducibility and stability of the developed heterojunction UV photodetector.

关 键 词：探测器 ZNO 异质结 响应度 

分 类 号：O472.8[理学—半导体物理]