基于直流调制技术Pockels Cell高压纳秒级脉冲源研制  

Development of Pockels Cell Driving Pulse Generator Based on DC Modulation Technique

作　　者：蒋顺利[1] 郎佳红[1] 冯德仁[1] 丁凯[1] 

机构地区：[1]安徽工业大学电气与信息工程学院,安徽马鞍山243032

出　　处：《安徽工业大学学报（自然科学版）》2014年第2期173-176,共4页Journal of Anhui University of Technology（Natural Science）

基　　金：安徽省重大教研项目(2013ZDJY074)

摘　　要：研制一种基于直流调制技术的高压纳秒级脉冲源,将其作为Pockels Cell前馈驱动电源。分析直流调制技术的原理,选用金属氧化物半导体场效应管(MOSFET)作为主调制开关,设计系统辅助电路。实验结果表明:输出的高压脉冲最高幅值可达800 V、脉冲前沿小于100 ns、高压抖动较小。该结果为更高脉冲重复频率、更快上升沿脉冲源的研制提供了借鉴。A high voltage pulse generator based on DC modulation technique was presented, which can be used as pockels cell driving source. The principles of DC modulation technique of system were analyzed. The metal-oxide semiconductor field effect transistor （MOSFET） was chosen as main modulation switch.The system auxiliary circuit was designed. Experimental results indicate that the highest amplitude of output pulse can be up to 800 V, its pulse front and jitter are less than 100 ns, and high ovltage shakes smaller. The results provide better references for pulse generator with higher repetitive rate and lower pulse front edge.

关 键 词：Pockels CELL 直流调制技术 脉冲源 功率MOSFET 

分 类 号：TM709[电气工程—电力系统及自动化]