一种适用于自旋磁随机存储器的低压写入电路  

Design of the writing circuit with a low supply voltage for the spin-transfer torque random access memory

作　　者：张丽[1] 庄奕琪[1] 赵巍胜 汤华莲[1] 

机构地区：[1]西安电子科技大学宽禁带半导体材料与器件教育部重点实验室,陕西西安710071 [2]巴黎第十一大学

出　　处：《西安电子科技大学学报》2014年第3期131-137,共7页Journal of Xidian University

基　　金：国家自然科学基金资助项目(61204092);国家重大科技专项资助项目(2012ZX03001018-003);中央高校基本科研业务费资助项目(K5051225017)

摘　　要：为了降低自旋转移力矩磁随机存储器的写入功耗,提出了一种低电源电压写入电路.该电路利用列选和读写隔离相结合的方法,减小了写入支路上的电阻,写入电源电压由1.8V降低为1.2V,写入功耗降低了近33%.同时,该电路减小了读取电流对磁隧道结存储信息的干扰,可有效提高自旋转移力矩磁随机存储器的存储可靠性.利用65nm的磁隧道结器件模型和商用CMOS器件模型进行了电路仿真,仿真结果表明,低电源电压写入电路能有效降低自旋转移力矩磁随机存储器写入功耗,提高其可靠性.A writing circuit with a low supply voltage for the spin transfer torque magnetic random access memory （STT-MRAM ） is proposed to reduce the writing power consumption . Using the combination of the column selecting and the isolation between writing and reading operation , the writing circuit with a low supply voltage decreases the resistor value of the writing branch and the value of the reading current . Therefore the switching power efficiency and the reliability can be improved . By using an accurate compact model of the 65 nm magnetic tunnel junction （ M TJ） and a commercial CMOS design-kit , mixed transient and statistical simulations have been performed to validate this design . Simulation results indicate that the proposed circuits can decrease the writing power consumption and improve the reliability .

关 键 词：自旋转移力矩磁随机存储器 磁隧道结 低功耗 高可靠性 

分 类 号：TN45[电子电信—微电子学与固体电子学]